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Evidence of Defect Levels in p and n-Type Electron Irradiated Si

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Abstract

Capacitance bridge measurements at low temperature on irradiated specimens of p and n-type Si are reported. Electronic defect levels are seen at {ie439-1} and {ie439-2} The change of the band structure caused by irradiation is also described.

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Authors and Affiliations

  1. Physical Laboratory, University of Reading, Reading, UK

    S. D. Kouimtzi

  2. and University of Thessaloniki, Thessaloniki, Greece

    J. J

Authors
  1. S. D. Kouimtzi
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Kouimtzi, S.D., J, J. Evidence of Defect Levels in p and n-Type Electron Irradiated Si. MRS Online Proceedings Library 209, 439–444 (1990). https://doi.org/10.1557/PROC-209-439

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  • DOI: https://doi.org/10.1557/PROC-209-439

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