Processing Effects on the Electrical and Optical Properties of Sulfur-Related Defect Centers in Silicon and Similarities to the Oxygen Donor


The properties of sulfur-related defects in silicon are shown to differ dramatically from those that would have been expected on the basis of effective mass theory for a simple substitutional double donor. The ratio of the densities of the sulfur states as measured by capacitance-voltage techniques has been observed to vary in specimens fabricated from the same starting resistivity. Optical absorption studies have shown that the deepest sulfur level has a manifold of ground states which anneal at unequal rates at 550°C. Deep-level measurements show that the thermal emission rate at a given temperature and the variety of effects produced depends on annealing history and total sulfur density. The variability of properties of samples of sulfur-doped silicon is similar to those found for the oxygen donors in silicon, thus suggesting a chemical trend for the column VI impurities in silicon.

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Correspondence to Richard A. Forman.

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The work was conducted as part of the Semiconductor Technology Program at NBS. Portions of this work were supported by the Division of Electric Energy Systems, Department of Energy (Task Order A021-EES). Not subject to copyright.

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Forman, R.A., Larrabee, R.D., Myers, D.R. et al. Processing Effects on the Electrical and Optical Properties of Sulfur-Related Defect Centers in Silicon and Similarities to the Oxygen Donor. MRS Online Proceedings Library 2, 79 (1980).

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