The properties of sulfur-related defects in silicon are shown to differ dramatically from those that would have been expected on the basis of effective mass theory for a simple substitutional double donor. The ratio of the densities of the sulfur states as measured by capacitance-voltage techniques has been observed to vary in specimens fabricated from the same starting resistivity. Optical absorption studies have shown that the deepest sulfur level has a manifold of ground states which anneal at unequal rates at 550°C. Deep-level measurements show that the thermal emission rate at a given temperature and the variety of effects produced depends on annealing history and total sulfur density. The variability of properties of samples of sulfur-doped silicon is similar to those found for the oxygen donors in silicon, thus suggesting a chemical trend for the column VI impurities in silicon.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
S. K. Ghandi in: Semiconductor Power Devices (John Wiley & Sons, New York 1977) pp. 2–8.
P. Migliorato and C. T. Elliott, Solid State Electronics 21, 443 (1978).
P. K. Chatterjee, G. W. Taylor, A. F. Tasch, Jr., and H-S. Fu, IEEE Trans. Electron Devices ED-26, 564 (1979).
D. R. Myers and W. E. Phillips, Appl. Phys. Lett. 32, 756 (1978).
D. R. Myers and W. E. Phillips, J. Elec. Mater. 8, 781 (1979).
R. A. Forman, Appl. Phys. Lett. 37 (9), 776 (1980).
S. Pantelides and C. T. Sah, Solid State Communications 11, 1713 (1972)
See, e.g., J. W. Corbett, Radiat. Eff. 6, 3 (1970).
M. G. Buehler and W. E. Phillips, Solid State Electronics 19, 777 (1976).
D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
D. R. Myers, R. Y. Koyama, and W. E. Phillips, Radiat. Eff. 47, 91 (1980).
M. G. Buehler, Semiconductor Measurement Technology: Microelectronic Test Patterns: An Overview, NBS Spec. Publ. 400–6 (August 1974).
D. L. Camphausen, H. M. James, and R. D. Sladek, Phys. Rev. B2, 1899 (1970).
T. H. Ning and C. T. Sah, Phys. Rev. B4, 3482 (1971).
D. Wruck and P. Gaworzewski, phys. stat. sol. (a) 56, 557 (1979).
A. O. Evwaraye, J. Appl. Phys. 48, 3813 (1977).
D. V. Lang, H. Grimmeiss, E. Meijer, and M. Jaros, Phys. Rev. B, to be published.
See, for example, S. Braun, H. G. Grimmeiss, and K. Spann, J. Appl. Phys. 48, 3883 (1977).
A. G. Milnes in: Deep Impurities in Semiconductors, Chapter 1 (John Wiley and Sons, Inc., New York 1973).
The work was conducted as part of the Semiconductor Technology Program at NBS. Portions of this work were supported by the Division of Electric Energy Systems, Department of Energy (Task Order A021-EES). Not subject to copyright.
About this article
Cite this article
Forman, R.A., Larrabee, R.D., Myers, D.R. et al. Processing Effects on the Electrical and Optical Properties of Sulfur-Related Defect Centers in Silicon and Similarities to the Oxygen Donor. MRS Online Proceedings Library 2, 79 (1980). https://doi.org/10.1557/PROC-2-79