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Point Defects, Diffusion Mechanisms, and the Shrinkage and Growth of Extended Defects in Silicon

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Abstract

The paper introduces the basic point-defect models proposed for silicon, which involve either vacancies or self-interstitials only, or both types of point defects simultaneously under thermal-equilibrium conditions. The growth and shrinkage kinetics of oxidation-induced stacking faults as well as oxidation-enhanced or -retarded diffusion phenomena are discussed within the frame work of these models. Whereas no unambiguous conclusions on the dominant diffusion mechanism can be drawn from the available oxidation-related experiments, recent investigations on so-called anomalous diffusion phenomena (e.g., the ‘emitter-push effect’) and on the diffusion of gold in silicon demonstrate Si self-interstitials to be the point defects governing self- and impurity diffusion. The possibility of a coexistence of vacancies and self-interstitials in thermal equilibrium is discussed in this context. The paper concludes with speculations on how carbon in conjunction with self-interstitials may influence the nucleation process of oxygen precipitates in silicon.

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Authors and Affiliations

  1. IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y., USA

    Ulrich Gösele

  2. MPI fGür Metallforschung, Institut für Physik, Stuttgart, Fed. Rep. Germany

    Werner Frank

  3. Institut für Theoretische und Angewandte Physik, Universität Stuttgart, Stuttgart, Fed. Rep. Germany

    Werner Frank

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  1. Ulrich Gösele
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  2. Werner Frank
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On leave of absence from the Max-Planck-Institut für Metallforschung, Stuttgart, Fed. Rep. Germany

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Gösele, U., Frank, W. Point Defects, Diffusion Mechanisms, and the Shrinkage and Growth of Extended Defects in Silicon. MRS Online Proceedings Library 2, 55 (1980). https://doi.org/10.1557/PROC-2-55

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