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Electron Microscope Characterization of Pulse Annealed Semiconductors

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Abstract

The pulse processing techniques that have assumed prominence over the past few years offer various important advantages for device fabrication technology. However, the usefulness of each individual method depends substantially upon the specific annealing mechanism involved. This article demonstrates the role of electron microscopy in elucidating such mechanisms and in analysing annealed semiconductor structures of importance to both research workers and semiconductor technologists. The range of laser and electron beam pulse annealing methods is covered and defect structure transitions observed are related to the solid and liquid phase processes occurring. Characteristic impurity trapping and segregation phenomena are described.

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  1. Royal Signals and Radar Establishment, St. Andrews Road, Malvern, England

    A. G. Cullis

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Cullis, A.G. Electron Microscope Characterization of Pulse Annealed Semiconductors. MRS Online Proceedings Library 2, 393 (1980). https://doi.org/10.1557/PROC-2-393

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