Enhanced diffusion of dopants and the formation of defects during thermal oxidation of silicon has been investigated using electron microscopy, Rutherford backscattering, and secondary ion mass spectrometry techniques. Enhanced diffusion of boron was clearly demonstrated in laser annealed specimens in which secondary defects were not present. In the presence of secondary defects, such as precipitates, enhanced diffusion of boron was not observed. The absence of enhanced diffusion during thermal oxidation was also observed for arsenic in silicon. The mechanisms associated with thermal–oxidation enhanced diffusion are discussed briefly.
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S. M. Hu, J. Vac. Sci. Technol. 14, 17 (1977).
S. M. Hu, J. Appl. Phys. 45, 1567 (1978).
C. W. White, J. Narayan and R. T. Young, Science 204, 461 (1979).
A. S. Grove, Physics and Technology of Semiconductor Devices (Wiley, New York, 1967).
D. A. Antoniadis, A. M. Lin and R. W. Dutton, Appl. Phys. Lett. 33, 1030 (1978).
R. J. Jaccodine and C. M. Drum, Appl. Phys. Lett. 8, 29 (1966).
I. R. Sanders and P. S. Dobson, Phil. Mag. 20, 881 (1969).
J. Narayan, these proceedings.
Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.
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Narayan, J., Fletcher, J., Appleton, B.R. et al. Enhanced Diffusion and Formation of Defects During Thermal Oxidation. MRS Online Proceedings Library 2, 355 (1980). https://doi.org/10.1557/PROC-2-355