From the Mystery to the Understanding of the Self-Interstitials in Silicon

MRS Online Proceedings Library volume 2, Article number: 31 (1980) Cite this article

Abstract

Our present knowledge on self-interstitials in silicon and the rôle these defects play under widely different experimental conditions are surveyed. In particular, the following phenomena involving self-interstitials either in supersaturations or under high-temperature thermal-equilibrium conditions are considered: mobility-enhanced diffusion of self-interstitials below liquid-helium temperature, thermally activated diffusion of self-interstitials at inter-mediate temperatures (14O K to 600 K), concentration-enhanced diffusion of Group-III or Group-V elements in silicon at higher temperatures, and— as examples for high-temperature equilibrium phenomena — self-diffusion and diffusion of gold in silicon. This leads to the picture that the self-interstitials in silicon may occur in different electrical charge states and possess dumbbell configurations or are extended over several atomic volumes at intermediate or high temperatures, respectively.

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References

  1. 1.

    G. D. Watkins, in: Radiation Damage in Semiconductors, P. Baruch ed. (Dunod, Paris 1964) p. 97.

    Google Scholar 

  2. 2.

    G. D. Watkins, in: Lattice Defects in Semiconductors 1974, F. A. Huntley ed. (Institute of Physics, London and Bristol 1975), Inst. Phys. Conf. Ser. No. 23, p. 1.

    Google Scholar 

  3. 3.

    K. L. Brower, Phys. Rev. B 1, 1908 (1970).

    Article  Google Scholar 

  4. 4.

    R. E. McKeighen and J. S. Koehler, Phys. Rev. B 4, 462 (1971).

    Article  Google Scholar 

  5. 5.

    P. S. Gwozdz and J. S. Koehler, Bull. Am. Phys. Soc. 17, 307 (1972).

    Google Scholar 

  6. 6.

    J. Arimura and J. W. MacKay, in: Radiation Effects in Semiconductors, F. L. Vook ed. (Plenum Press, New York 1968) p. 204.

    Google Scholar 

  7. 7.

    W.D. Hyatt and J. S. Koehler, Phys. Rev. B 4, 1903 (1971).

    Article  Google Scholar 

  8. 8.

    A. Seeger and K.P. Chik, phys. stat. sol. 29, 455 (1968).

    CAS  Article  Google Scholar 

  9. 9.

    A. Seeger, Rad. Effects 9, 15 (1971).

    CAS  Article  Google Scholar 

  10. 10.

    A. Seeger and W. Frank, in: Radiation Damage and Defects in Semiconductors, J. E. Whitehouse ed. (Institute of Physics, London and Bristol 1972) p. 262.

    Google Scholar 

  11. 11.

    W. Frank, in: Lattice Defects in Semiconductors 1974, F. A. Huntley ed. (Institute of Physics, London and Bristol 1975), Inst. Phys. Conf. Ser. No. 23, p. 23.

    Google Scholar 

  12. 12.

    A. Seeger, H. Föll, and W. Frank, in: Radiation Effects in Semiconductors 1976, N. B. Urli and J. W. Corbett eds. (Institute of Physics, Bristol and London 1977), Inst. Phys. Conf. Ser. No. 31, p. 12.

    Google Scholar 

  13. 13.

    A. Seeger, W. Frank, and U. Gösele, in: Defects and Rad. Effects in Semiconductors 1978, J. H. Albany ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. Conf. Ser. No. 46, p. 148.

    Google Scholar 

  14. 14.

    H. M. James and K. Lark-Horovitz, Z. Phys. Chem. (Leipzig) 198, 107 (1951).

    CAS  Google Scholar 

  15. 15.

    E. I. Blount, J. Appl. Phys. 30, 1218 (1959).

    Article  Google Scholar 

  16. 16.

    G. D. Watkins, R. P. Messmer, C. Weigel, D. Peak, and J. W. Corbett, Phys. Rev. Lett. 27, 1573 (1971).

    CAS  Article  Google Scholar 

  17. 17.

    G. Hettich, H. Mehrer, and K. Maier, in: Defects and Radiation Effects in Semiconductors 1978, J. H. Albany ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. Conf. Ser. No. 46, p. 500.

    Google Scholar 

  18. 18.

    G. L. McVay and A. R. DuCharme, in: Lattice Defects in Semiconductors 1974, F. A. Huntley ed. (Institute of Physics, Bristol and London 1975), Inst. Phys. Conf. Ser. No. 23, p. 91.

    Google Scholar 

  19. 19.

    D. Shaw, phys. stat. sol. (b) 72, 11 (1975).

    CAS  Article  Google Scholar 

  20. 20.

    J. A. van Vechten and C. D. Thurmond, Phys. Rev. B 14, 3551 (1976).

    Article  Google Scholar 

  21. 21.

    R. B. Fair, in: Semiconductor Silicon 1977, H. R. Huff and E. Sirtl eds. (Electrochemical Society, Princeton 1977) p. 968.

    Google Scholar 

  22. 22.

    G. D. Watkins, J. R. Troxell, and A. P. Chatterjee, in: Lattice Defects in Semiconductors 1978, J. H. Albany ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. Conf. Ser. No. 46, p. 16.

    Google Scholar 

  23. 23.

    S. M. Hu, J. Appl. Phys. 45, 1567 (1974).

    CAS  Article  Google Scholar 

  24. 24.

    S. M. Hu, J. Vac. Sci. Technol. 14, 17 (1977).

    CAS  Article  Google Scholar 

  25. 25.

    E. Sirtl, in: Semiconductor Silicon 1977, H. R. Huff and E. Sirtl eds. (Electrochemical Society, Princeton, 1977) p. 4.

    Google Scholar 

  26. 26.

    S. I. Tan, B. S. Berry, and W. Frank, in: Ion Implantation in Semiconductors and Other Materials, B. L. Crowder ed. (Plenum Press, New York and London 1973) p. 19.

    Google Scholar 

  27. 27.

    W. Frank, U. Gösele, and A. Seeger, in: Proceedings of the International Conference on Radiation Physics in Semiconductors and Related Materials (Tbilisi/USSR, September 1979), in the press.

  28. 28.

    H. J. Mayer, H. Mehrer, and K. Maier, in: Radiation Effects in Semiconductors 1976, N. B. Urli and J. W. Corbett eds. (Institute of Physics, Bristol and London 1977), Inst. Phys. Conf. Ser. No. 31, p. 186.

    Google Scholar 

  29. 29.

    A. K. Jonscher, Principles of Semiconductor Device Operation (Wiley, New York 1960).

    Google Scholar 

  30. 30.

    L. J. Bernewitz and K. R. Mayer, phys. stat. sol. (a) 16, 579 (1973).

    CAS  Article  Google Scholar 

  31. 31.

    A. J. R. de Kock, Phillips Res. Rep., Suppl. 4, 1 (1973).

  32. 32.

    H. Föll and B. O. Kolbesen, Appl. Phys. 8, 319 (1975).

    Article  Google Scholar 

  33. 33.

    P. M. Petroff and A. J. R. de Kock, J. Cryst. Growth 30, 117(1975).

    CAS  Article  Google Scholar 

  34. 34.

    H. Poll, B. O. Kolbesen, and W. Frank, phys. stat. sol. (a) 29, K 83 (1975).

    Article  Google Scholar 

  35. 35.

    L. C. Kimerling, in: Defects and Radiation Effects in Semiconductors 1978, J. H. Albany ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. Conf. Ser. No. 46, p.56.

    Google Scholar 

  36. 36.

    J. C. Bourgoin and J. W. Corbett, Rad. Effects 36, 157 (1978).

    CAS  Article  Google Scholar 

  37. 37.

    U. Gösele, W. Frank, and A. Seeger, in: Defects and Radiation Effects in Semiconductors 1978, J. H. Albany ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. Conf. Ser. No. 46, p. 538.

    Google Scholar 

  38. 38.

    A. Seeger and H. Mehrer, in: Vacancies and Interstitials in Metals, A. Seeger, D. Schumacher, W. Schilling, and J. Diehl eds. (North-Holland, Amsterdam 1970) p. 1.

    Google Scholar 

  39. 39.

    H. Mehrer, J. Nuclear Materials 69/70, 38 (1978).

    Article  Google Scholar 

  40. 40.

    J. R. Troxell, A. P. Chatterjee, G. D. Watkins, and L. C. Kimerling, Phys. Rev. B 19, 5 336 (1979).

    Google Scholar 

  41. 41.

    L. C. Kimerling and D. V. Lang, in: Lattice Defects in Semiconductors 1974, F. A. Huntley ed. (Institute of Physics, London and Bristol 1975), Inst. Phys. Conf. Ser. No. 23, page 589.

    Google Scholar 

  42. 42.

    J. D. Weeks, J. C. Tully, and L. C. Kimerling, Phys. Rev. B. 12, 3286 (1975).

    CAS  Article  Google Scholar 

  43. 43.

    J. C. Bourgoin and J. W. Corbett, Phys. Lett. 38A, 135 (1972).

    Article  Google Scholar 

  44. 44.

    J. R. Troxell and G. D. Watkins, Phys. Rev. B 22, 921 (1980).

    CAS  Article  Google Scholar 

  45. 45.

    B. J. Masters and E. F. Gorey, J. Appl. Phys. 49, 2717 (1978).

    CAS  Article  Google Scholar 

  46. 46.

    W. M. Lomer, Harwell Report 1540 (AERE, Harwell 1954).

    Google Scholar 

  47. 47.

    J.G. Dienes and A. C. Damask, J. Appl. Phys. 29, 1713 (1958).

    CAS  Article  Google Scholar 

  48. 48.

    R. Sizmann, J. Nuclear Material 69/70, 386 (1978).

    Article  Google Scholar 

  49. 49.

    P. Baruch, J. Monnier, B. Blanchard, and C. Castaing, Appl. Phys. Lett. 26, 77 (1975).

    CAS  Article  Google Scholar 

  50. 50.

    P. Baruch, in: Radiation Effects in Semiconductors 1976, N. B. Urli and J. W. Corbett eds. (Institue of Physics, Bristol and London 1977), Inst. Phys. Conf. Ser. No. 31, p. 126 (1977).

    Google Scholar 

  51. 51.

    W. Akutagawa, H. L. Dunlop, R. Hart, and O. J. Marsh, J. App. Phys. 50, 777 (1979).

    CAS  Article  Google Scholar 

  52. 52.

    P. R. Okamoto and L. E. Renn, J. Nuclear Materials 83, 2 (1979).

    CAS  Article  Google Scholar 

  53. 53.

    U. Gösele and H. Strunk, Appl. Phys. 20, 265 (1979).

    Article  Google Scholar 

  54. 54.

    F. Seitz, Acta Cryst. 3, 355 (1950).

    CAS  Article  Google Scholar 

  55. 55.

    D. G. Nelson, J. F. Gibbson, and W. S. Johnson, Appl. Phys. Lett. 15, 246 (1969).

    CAS  Article  Google Scholar 

  56. 56.

    K. Gamo, K. Masuda, S. Namba, S. Ishihara, and I. Kimura, Appl. Phys. Lett. 17, 391 (1970).

    CAS  Article  Google Scholar 

  57. 57.

    W. G. Allen, Sol. State Electr. 16, 709 (1973).

    CAS  Article  Google Scholar 

  58. 58.

    D. A. Antoniadis, A. G. Gonzalez, and R. W. Dutton, J. Electrochem. Soc. 127, 2243 (1980).

    Article  Google Scholar 

  59. 59.

    K. H. Nickolas, Sol. State Electr. 9, 35 (1966).

    Article  Google Scholar 

  60. 60.

    G. Masetti, S. Solmi, and G. Soncini, Sol. State Electr. 16, 1419 (1973).

    CAS  Article  Google Scholar 

  61. 61.

    G. Masetti, S. Solmi, and G. Soncini, Phil. Mag. 33, 613 (1976).

    CAS  Article  Google Scholar 

  62. 62.

    R. Francis and P. S. Dobson, J. Appl Phys. 50, 280 (1979).

    CAS  Article  Google Scholar 

  63. 63.

    D. A. Antonidis, A. M. Lin, and R. W. Dutton, Appl. Phys. Lett. 33, 1030 (1978).

    Article  Google Scholar 

  64. 64.

    S. M. Hu, in: Diffusion in Semiconductors, D. Shaw ed. (Plenum Press, London 1973) p. 217.

    Google Scholar 

  65. 65.

    A. F. W. Willoughby, Rep. Prog. Phys. 41, 1665 (1978).

    CAS  Article  Google Scholar 

  66. 66.

    A. F. W. Willoughby, J. Phys. D 10, 455 (1977).

    CAS  Article  Google Scholar 

  67. 67.

    U. Gösele and W. Frank, in these proceedings.

  68. 68.

    B. Leroy, J. Appl. Phys. 50, 7996 (1979).

    CAS  Article  Google Scholar 

  69. 69.

    C. L. Claeys, G. J. Declerck, and R. J. van Overstraeten, in: Semiconductor Characterization Techniques, P. A. Barnes and G. A. Rozgonyi eds. (Electrochemical Society, Princeton 1978) p. 366.

    Google Scholar 

  70. 70.

    W. R. Wilcox and T. J. LaChapelle, J. Appl. Phys. 35, 240 (1964).

    CAS  Article  Google Scholar 

  71. 71.

    W. R. Wilcox, T. J. LaChapelle, and D. H. Forbes, J. Electrochem. Soc. 111, 1377 (1964).

    CAS  Article  Google Scholar 

  72. 72.

    M. J. Hill, M. Lietz, R. Sittig, W. Frank, U. Gösele, and A. Seeger, in: Proceedings of the International Conference on Radiation Physics in Semiconductors and Related Materials (Tbilisi/USSR, September 1979), in the press.

  73. 73.

    G. J. Sprokel and J. M. Fairfield, J. Electrochem. Soc. 112, 200 (1965).

    CAS  Article  Google Scholar 

  74. 74.

    J. L. Lambert, Wiss. Ber. AEG-Telefunken 45, 153 (1972).

    Google Scholar 

  75. 75.

    W. C. Dash, J. App. Phys. 31, 2275 (1960).

    CAS  Article  Google Scholar 

  76. 76.

    F. A. Huntley and A. F. W. Willoughby, Solid-State Electronics 13, 1231 (1970).

    CAS  Article  Google Scholar 

  77. 77.

    F. A. Huntley and A. F. W. Willoughby, J. Electrochem. Soc. 120, 414 (1973).

    CAS  Article  Google Scholar 

  78. 78.

    F. A. Huntley and A. F. W. Willoughby, Phil. Mag. 28, 1319 (1973).

    CAS  Article  Google Scholar 

  79. 79.

    F. C. Frank and D. Turnbull, Phys. Rev. 104, 617 (1956).

    CAS  Article  Google Scholar 

  80. 80.

    U. Gösele, W. Frank, and A. Seeger, Appl. Phys. 23, 361 (1980).

    Article  Google Scholar 

  81. 81.

    A. Seeger, phys. stat. sol. (a) 61, 521 (1980).

    CAS  Article  Google Scholar 

  82. 82.

    M. D. Sturge, Proc. Phys. Soc. (Lond.) 73, 297 (1959).

    CAS  Article  Google Scholar 

  83. 83.

    A. Seeger and W. Frank, to be published.

  84. 84.

    W. Meyberg, unpublished.

  85. 85.

    W. M. Bullis, Solid-State Electronics 9, 143 (1966).

    CAS  Article  Google Scholar 

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Affiliations

  1. Max-Planck-Institut für Metallforschung, Institut für Physik, Heisenbergstr. 1, D-7000, Stuttgart 80, Germany

    W. Frank, A. Seeger & U. Gösele

  2. Institut für Theoretische und Angewandte Physik, Universität Stuttgart, Pfaffenwaldring 57, D-7000, Stuttgart 80, Germany

    W. Frank, A. Seeger & U. Gösele

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  1. W. Frank
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  2. A. Seeger
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  3. U. Gösele
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Correspondence to W. Frank.

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Frank, W., Seeger, A. & Gösele, U. From the Mystery to the Understanding of the Self-Interstitials in Silicon. MRS Online Proceedings Library 2, 31 (1980). https://doi.org/10.1557/PROC-2-31

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