Sol-Gel Thin Film Electronic Properties

Abstract

We have explored the effects of various processing parameters on the dielectric andelectronic integrity of sol-gel derived silicate thin films and have identified several factors that strongly affect the thin film electronic properties. We find that sol-gel dielectrics can exhibit excellent dielectric integrity: viz., low interface trap densities and fairly good insulating properties approaching those of a thermally grown SiO2 film on Si.

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Correspondence to W. L. Warren.

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Warren, W.L., Lenahan, P.M., Brinker, C.J. et al. Sol-Gel Thin Film Electronic Properties. MRS Online Proceedings Library 180, 413 (1990). https://doi.org/10.1557/PROC-180-413

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