The Transport Properties and Defect Chemistry of La2-XSrXCuO4-δ

MRS Online Proceedings Library volume 169, pages65–68(1989)Cite this article

Abstract

La2-xSrxCuO4-δ has been studied to determine the role of dopants and oxygen stoichiometry on the transport properties and defect chemistry of this system. The conductivity was found to reach a maximum for 0.2 < x < 0.3 which reflects a change from electronic to ionic compensation of the Sr dopant at large values of x. A metal to semiconductor transition is observed for x > 0.6 for temperatures below ∼ 600°C. However, the source of this behavior is not clear, given that an increasing amount of second phase was observed for x > 0.4. The conductivity and thermoelectric power (TEP) of La2CuO4 show a Po21/6 dependence and a temperature independence, implying that the hole mobility is not thermally activated and the enthalpy of oxidation is nearly zero. This last conclusion is confirmed by TGA data.

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References

  1. 1.

    P. Ganguly and C.N.R. Rao, Mat. Res. Bull. 8 405 (1973).

    CAS  Article  Google Scholar 

  2. 2.

    J.B. Goodenough, Mat. Res. Bull. 8 423 (1973).

    CAS  Article  Google Scholar 

  3. 3.

    J.B. Goodenough, G. Demazeau, M. Pouchard, and P. Hagen-muller, J. Solid State Chem. 8 325 (1973).

    CAS  Article  Google Scholar 

  4. 4.

    N. Nguyen, L. Er-Rakho, C. Michel, J. Choisnet, and B. Raveau, Mater. Res. Bull. 15 791 (1980).

    Article  Google Scholar 

  5. 5.

    N. Nguyen, J. Choisnet, M. Hervieu, and B. Raveau, J. Solid State Chem. 39 120 (1981).

    CAS  Article  Google Scholar 

  6. 6.

    N. Nguyen, F. Studer, and B. Raveau, J. Phys. Chem. Solids, 44 389 (1983).

    CAS  Article  Google Scholar 

  7. 7.

    C. Michel and B. Raveau, Revue Chimie Minerale, 20 407 (1984).

    Google Scholar 

  8. 8.

    G.M. Choi, H.L. Tuller, M.J. Tsai, MRS Proc. Vol. 99, Eds. M.W. Brodsky, R.C. Dynes, K. Kitizawa, and H.L. Tuller, MRS, Pittsburgh, PA (1988), p. 141.

    Google Scholar 

  9. 9.

    M.P. Pechini, U.S. Patent 3,330,697 (1967).

    Google Scholar 

  10. 10.

    e.g., G.M. Choi and H.L. Tuller, J. Am. Ceram. Soc., .71 201 (1988).

    CAS  Article  Google Scholar 

  11. 11.

    K.K. Singh, P. Ganguly, and J.B. Goodenough, J. Solid State Chem. 52 254 (1984).

    CAS  Article  Google Scholar 

  12. 12

    M.J. Tsai and H.L. Tuller, unpublished results.

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Affiliations

  1. Crystal Physics & Optical Electronics Laboratory, Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 01239, USA

    Ming-Jinn Tsai, Elizabeth J. Opila & Harry L. Tuller

Authors
  1. Ming-Jinn Tsai
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  2. Elizabeth J. Opila
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  3. Harry L. Tuller
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Correspondence to Ming-Jinn Tsai.

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Tsai, MJ., Opila, E.J. & Tuller, H.L. The Transport Properties and Defect Chemistry of La2-XSrXCuO4-δ . MRS Online Proceedings Library 169, 65–68 (1989). https://doi.org/10.1557/PROC-169-65

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