In Situ Growth of High Quality Epitaxial Yba2cu3O7-X Thin Films at Moderate Temperatures by Pulsed Laser Ablation

Abstract

Pulsed KrF (248 nm) laser ablation has been used for in situ growth of smooth, high-quality YBa2Cu3O7-x epitaxial films of variable thickness on SrTiO3, KTaO3, LaGaO3, LaA1O3, cubic ZrO2, and MgO substrates, at temperatures of ∼60O-730°C, without higher temperature post-annealing. A rotating target pellet, fine focusing by a single cylindrical lens, laser-beam scanning over the target, and laser energy densities ∼2.5-3 J/cm2 can be combined to yield films of completely uniform composition and with ∼25% thickness variation over areas ∼8 cm2. The best films have Tc > 92 K and JC(H = 0, T = 77 K) > 2 MA/cm2. Film-growth procedures are described, together with results of superconducting and normal-state transport measurements.

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Correspondence to Douglas H. Lowndes.

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Lowndes, D.H., Norton, D.P., Mccamy, J.W. et al. In Situ Growth of High Quality Epitaxial Yba2cu3O7-X Thin Films at Moderate Temperatures by Pulsed Laser Ablation. MRS Online Proceedings Library 169, 431–434 (1989). https://doi.org/10.1557/PROC-169-431

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