Metalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a major technique for the fabrication of high temperature superconductor devices. In this paper, we present preliminary results of in-situ deposition of Y-Ba-Cu-0 thin films (Tc = 79K) by rapid isothermal processing assisted MOCVD on BaF2/silicon substrates.
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R. Singh, S. Sinha, P. Chou, N. J. Hsu, F. Radpour, H. S. Ullal, and A. J. Nelson, J. App. Phys. 66, 6179 (1989).
R. Singh, R. P. S. Thakur, A. Kumar, P. Chou, and J. Narayan, Appl. Phys. Lett. 56, 247 (1990).
R. Singh, J. App. Phys. 63, R 69 (1988).
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Singh, R., Sinha, S. & Narayan, J. In-Situ Preparation and Characterization of Superconducting Thin Films and Related Materials by Mocvd for the Development of Three Terminal Switching Devices. MRS Online Proceedings Library 169, 1129–1132 (1989). https://doi.org/10.1557/PROC-169-1129