Properties of Mbe Grown Heterostructures of GaAs/InSb and InP/InSb

MRS Online Proceedings Library volume 145, pages399–404(1989)Cite this article

Abstract

We have employed molecular beam epitaxy in the growth of InSb on GaAs and InP. The transport, optical and structural properties of the films were investigated by in-situ reflection high energy electron diffraction, Hall effect and temperature dependent Hall effect, photoluminescence, transmission electron microscopy and X-ray diffractometry techniques. We report mobilities of up to 32,000 cm2/volt-sec and free electron concentrations of 3x1016/cm3 at room temperature. We have discovered a new defect state in InSb with an energy position of Ec - 0.05 ± 0.006eV. Optical and structural measurements reveal that the differences in thermal expansion and lattice mismatch between the substrates and films results in the broadening of the X-ray diffraction peaks and the near gap photoluminescence linewidths. Furthermore, we observe band gap shifts to higher energies of 10meV and 20meV for growth on GaAs and InP, respectively.

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  1. AT&T Bell laboratories, Murray Hill, 07974, NJ, USA

    M. T. Asom, E. A. Fitzgerald, F. A. Thiel, R. People, D. Eaglesham, L. Luther, S. K. Sputz & L. C. Kimerling

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  1. M. T. Asom
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  2. E. A. Fitzgerald
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Correspondence to M. T. Asom.

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Asom, M.T., Fitzgerald, E.A., Thiel, F.A. et al. Properties of Mbe Grown Heterostructures of GaAs/InSb and InP/InSb. MRS Online Proceedings Library 145, 399–404 (1989). https://doi.org/10.1557/PROC-145-399

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