Abstract
Gallium arsenide epitaxial layers with excellent morphology have been grown by organometallic chemical vapor deposition (OMCVD) on (100) and 2-3° off (100) InP substrates by a modified two-step growth commonly used for GaAs on Si. The layers have been characterized by X-ray diffraction, cross-sectional transmission electron microscopy (TEM), low temperature photoluminescence (PL) and Hall measurements. 1 µm gate GaAs metal-semiconductor field effect transistors (MESFETs) with transconductances as high as 220 mS/mm have been fabricated. These MESFETs have been integrated with buried heterostructure and V-groove InGaAsP lasers. The V-groove laser -MESFET OEIC transmitter has been shown to be capable of direct modulation at 5 Gb/sec bit rate. Finally we have also demonstrated GaAs single quantum well lasers with threshold currents as low as 800 A/cm2for 50 µm wide broad area gain guided devices with 1.25 mm long cavities.
Similar content being viewed by others
References
Κ. Asano, K. Kasahara, and T. Itoh, IEEE Electron Device Lett. EDL-8, 289 (1987).
Y-H. Lo, R. Bhat, and T.P. Lee, Electron Dev. Lett. 24, 865 (1988).
A. Suzuki, T. Itoh, T. Terakado, K. Kasahara, K. Asano, Y. Inomoto, H. Ishihara, T. Torikai, and S. Fujita, Electron. Dev. Lett. 27, 954 (1987).
A. Suzuki, T. Itoh, T. Terakado, Y. Inomoto, K. Kasahara, K. Asano, S. Fujita, and T. Torikai, ECOC Proceedings (1987).
R. Bhat, M.A. Koza, C.C. Chang, and S.A. Schwarz, J.Crystal Growth, 77, 7 (1986).
M. Akiyama, Y. Kawarada, T. Ueda, S. Nishi, and K. Kaminishi, J.Crystal Growth, 77, 490 (1986).
H. Horikawa, Y. Ogawa, Y.Kawai, and M. Sakuta, Appl. Phys. Lett. 53, 397 (1987).
R.M. Lum, J.K. Klingert, B.A. Davidson, and M.G. Lamont, Appl. Phys. Lett. 51, 36 (1987).
P.B. Hirsch, in Progress in Metal Physics, edited by B. Chalmers and R. King (Pergamon, New York, 1956), p.272.
D. Gerthsen, F.A. Ponce, G.B. Anderson, and H.F. Chung, 15th Annual Conf. on Phys. and Chem. of Semicond. Interfaces (1988).
D.J.Ashen, P.J.Dean, D.T.J. Hurle, J.B. Mullin, A.M. White, and P.D. Greene, J. Phys. Chem. Sol. 36, 1041 (1975).
S.K. Shastry, S.Zemon, and M. Oren, J. Crystal Growth 77, 503 (1986).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Bhat, R., Lo, YH., Caneau, C. et al. Low Pressure Omcvd Growth of GaAs on InP for Fet and Quantum Well Laser Fabrication. MRS Online Proceedings Library 145, 367–375 (1989). https://doi.org/10.1557/PROC-145-367
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-145-367