Vacuum Chemical Epitaxy: High Throughput GaAs Epitaxy Without Arsine

MRS Online Proceedings Library volume 145, pages253–258(1989)Cite this article

Abstract

Metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) are well established methods for growing epitaxial GaAs and AlGaAs films. However, MOCVD equip- ment uses the highly toxic gas, arsine, and MBE equipment is very costly and coats only one wafer at a time. We have developed a vacuum chemical epitaxy (VCE) reactor which avoids the use of arsine and allows multiple wafers to be coated in a production environment.

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Affiliations

  1. Boeing High Technology Center, P.O. Box 24969, Seattle, 98124-6269, WA., USA

    L. M. Fraas, G. R. Girard & V. S. Sundaram

  2. Emcore Inc., 35 Elizabeth Av- enue, Somerset, 08873, NJ, USA

    Chris Master & Rick Stall

Authors
  1. L. M. Fraas
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  2. G. R. Girard
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  3. V. S. Sundaram
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  4. Chris Master
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  5. Rick Stall
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Correspondence to L. M. Fraas.

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Fraas, L.M., Girard, G.R., Sundaram, V.S. et al. Vacuum Chemical Epitaxy: High Throughput GaAs Epitaxy Without Arsine. MRS Online Proceedings Library 145, 253–258 (1989). https://doi.org/10.1557/PROC-145-253

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