Automation Features Used with the Halide-Cvd Technique at the AT&T-Microelectronics Production Plant in Reading, Pennsylvania

MRS Online Proceedings Library volume 145, pages231–237(1989)Cite this article

Abstract

The the Halide-CVD technique is used in both research and development as well as production at AT&T. The unique requirements of the production environment dictate that reactor designs include features to improve reproducibility and maintenance, as well as reduce operator intervention. Features incorporated in the Halide-CVD reactor at AT&T include microprocessor control of valves, mass flow controllers, and furnace temperature setpoints. The unique needs of a production facility, such as process reproducibility, and commonality with standard plant equipment and information systems, will be highlighted.

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Affiliations

  1. AT&T-Microelectronics, P.O. Box 13396, Reading, 19612-3396, Pa., USA

    Bruce J. Rhoades, Steven J. Travis & David G. Sands

Authors
  1. Bruce J. Rhoades
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  2. Steven J. Travis
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  3. David G. Sands
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Correspondence to Bruce J. Rhoades.

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Rhoades, B.J., Travis, S.J. & Sands, D.G. Automation Features Used with the Halide-Cvd Technique at the AT&T-Microelectronics Production Plant in Reading, Pennsylvania. MRS Online Proceedings Library 145, 231–237 (1989). https://doi.org/10.1557/PROC-145-231

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