New Group III Precursors for the Movpe of GaAs and InP Based Material

Abstract

This paper presents proposals for the synthesis of several group III metal organics (In, Ga, Al compounds) and preliminary results on their use in the MOVPE (metal organic vapor phase epitaxy) of III-V semiconductors. The common feature of all these precursors is that they are saturated by interor intramolecular coordination. They are even non-pyrophoric and air resistant which is an interesting aspect with respect to safe handling. In addition, the compounds are liquid at room temperature with a low but sufficient vapor pressure for MOVPE without additional heating of the source.

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Hostalhe, M., Pohl, L., Merck, E. et al. New Group III Precursors for the Movpe of GaAs and InP Based Material. MRS Online Proceedings Library 145, 205–210 (1989). https://doi.org/10.1557/PROC-145-205

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