Abstract
The crystal habits of GaAs and GaAlAs grown on structured substrates by Metalorganic Chemical Vapor Deposition (MOCVD) have been investigated. The growth behavior was delineated by depositing alternating thin layers of AlGaAs and GaAs over grooves and mesas. A strong temperature dependence of facet growth rate and an anisotropy of Al composition with facet orientation are observed. This latter effect so far undocumented in MOCVD has been analysed by Auger Electron Spectroscopy performed on cleaved cross-sections. BCF theory has been used to extract quantitative microscopic data. These observations demonstrate the importance of surface effects and provide an insight into MOCVD growth mechanisms.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
Bibliography
K.M.Dzurko, E.P.Menu and P.D.Dapkus 15th International Symposium on GaAs and Related Compounds, Atlanta GA. (1988) (in press).
S.D.Hersee, E.Barbier and R.Blondeau J. Cryst. Growth 77 310 (1986).
P.Demeester, P.Van Daele and R.Baets J. Appl. Phys. 63 2284 (1988).
R.Bhat, E.Kapon, D.M.Hwang, M.A.Koza and C.P.Yun J. Cryst. Growth 93. 850 (1988).
E.Colas, A.Yi-Yan, R.Bhat, M.Seto and R.J.Deri Paper presented at the 1988 GaAs and Related compounds, Atlanta GA.
K.M.Dzurko, E.P.Menu, C.A.Beyler, J.Osinski and P.D.Dapkus Appl. Phys. Lett. 54 105 (1989).
A.Yoshikawa, A.Yamamoto, MHirose, T.Sugino, G.Kano and I.Teramoto J. Cryst. Growth 93. 843 (1988).
A.Gossard, J.H.English, P.M.Petroff, J.Cibert, G.J.Dolan and S.J.Pearton J. Cryst. Growth 81 101 (1987).
W.K.Burton, N.Cabrera and F.C.Frank Philos. Trans. Roy. Soc. (London) 243A 299 (1951).
See for example Modern Diffraction & Imaging Techniques in Materials Science, Edited by Amelickx (North Holland Publishers, 1970), p.586.
T.Nishinaga Paper presented at the US-Japan Seminar on Alloy Semiconductor Physics and Electronics.
H.P.Meier, E.VanGieson, W.Walter, C.Harder, M.Krahl and D.Bimberg Appl. Phys. Lett. 54 433(1989).
K.Mochizuki and T.Nishinaga Jpn. J. Appl. Phys. 27 1585 (1988).
G.B.Stringfellow in Crystal Growth of Electronic Materials, Edited by E.Kaldis (Elsevier Science Publishers, 1985), p.247.
D.W.Shaw J. Phys. Chem. Solids 36 111 (1975).
M.Tirtwidjojo and R.Pollard J. Cryst. Growth 77 200(1986).
M. Hoch and K. Hinge J. Chem. Phys. 35 451 (1961).
C.D.Thurmond J. Chem. Phys. Solids 26 785 (1965).
T.Nishinaga and K. Cho Jpn. J. Appl. Phys. 27 L12 (1988).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Menu, E.P., Dzurko, K.M. & Dapkus, P.D. Element III Segregation During Mocvd Growth on Structured Substrates. MRS Online Proceedings Library 145, 131–136 (1989). https://doi.org/10.1557/PROC-145-131
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-145-131