Element III Segregation During Mocvd Growth on Structured Substrates


The crystal habits of GaAs and GaAlAs grown on structured substrates by Metalorganic Chemical Vapor Deposition (MOCVD) have been investigated. The growth behavior was delineated by depositing alternating thin layers of AlGaAs and GaAs over grooves and mesas. A strong temperature dependence of facet growth rate and an anisotropy of Al composition with facet orientation are observed. This latter effect so far undocumented in MOCVD has been analysed by Auger Electron Spectroscopy performed on cleaved cross-sections. BCF theory has been used to extract quantitative microscopic data. These observations demonstrate the importance of surface effects and provide an insight into MOCVD growth mechanisms.

This is a preview of subscription content, access via your institution.


  1. [1]

    K.M.Dzurko, E.P.Menu and P.D.Dapkus 15th International Symposium on GaAs and Related Compounds, Atlanta GA. (1988) (in press).

  2. [2]

    S.D.Hersee, E.Barbier and R.Blondeau J. Cryst. Growth 77 310 (1986).

    Article  Google Scholar 

  3. [3]

    P.Demeester, P.Van Daele and R.Baets J. Appl. Phys. 63 2284 (1988).

    CAS  Article  Google Scholar 

  4. [4]

    R.Bhat, E.Kapon, D.M.Hwang, M.A.Koza and C.P.Yun J. Cryst. Growth 93. 850 (1988).

    CAS  Article  Google Scholar 

  5. [5]

    E.Colas, A.Yi-Yan, R.Bhat, M.Seto and R.J.Deri Paper presented at the 1988 GaAs and Related compounds, Atlanta GA.

  6. [6]

    K.M.Dzurko, E.P.Menu, C.A.Beyler, J.Osinski and P.D.Dapkus Appl. Phys. Lett. 54 105 (1989).

    CAS  Article  Google Scholar 

  7. [7]

    A.Yoshikawa, A.Yamamoto, MHirose, T.Sugino, G.Kano and I.Teramoto J. Cryst. Growth 93. 843 (1988).

    Article  Google Scholar 

  8. [8]

    A.Gossard, J.H.English, P.M.Petroff, J.Cibert, G.J.Dolan and S.J.Pearton J. Cryst. Growth 81 101 (1987).

    CAS  Article  Google Scholar 

  9. [9]

    W.K.Burton, N.Cabrera and F.C.Frank Philos. Trans. Roy. Soc. (London) 243A 299 (1951).

    Google Scholar 

  10. [10]

    See for example Modern Diffraction & Imaging Techniques in Materials Science, Edited by Amelickx (North Holland Publishers, 1970), p.586.

  11. [11]

    T.Nishinaga Paper presented at the US-Japan Seminar on Alloy Semiconductor Physics and Electronics.

  12. [12]

    H.P.Meier, E.VanGieson, W.Walter, C.Harder, M.Krahl and D.Bimberg Appl. Phys. Lett. 54 433(1989).

    CAS  Article  Google Scholar 

  13. [13]

    K.Mochizuki and T.Nishinaga Jpn. J. Appl. Phys. 27 1585 (1988).

    CAS  Article  Google Scholar 

  14. [14]

    G.B.Stringfellow in Crystal Growth of Electronic Materials, Edited by E.Kaldis (Elsevier Science Publishers, 1985), p.247.

  15. [15]

    D.W.Shaw J. Phys. Chem. Solids 36 111 (1975).

    CAS  Article  Google Scholar 

  16. [16]

    M.Tirtwidjojo and R.Pollard J. Cryst. Growth 77 200(1986).

    Article  Google Scholar 

  17. [17]

    M. Hoch and K. Hinge J. Chem. Phys. 35 451 (1961).

    CAS  Article  Google Scholar 

  18. [18]

    C.D.Thurmond J. Chem. Phys. Solids 26 785 (1965).

    CAS  Article  Google Scholar 

  19. [19]

    T.Nishinaga and K. Cho Jpn. J. Appl. Phys. 27 L12 (1988).

    Article  Google Scholar 

Download references

Author information



Corresponding author

Correspondence to Eric P. Menu.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Menu, E.P., Dzurko, K.M. & Dapkus, P.D. Element III Segregation During Mocvd Growth on Structured Substrates. MRS Online Proceedings Library 145, 131–136 (1989). https://doi.org/10.1557/PROC-145-131

Download citation