Abstract
This paper describes the application of high-resolution electron microscopy (HREM) to the determination of phase diagrams. Using a heating holder in a high-resolution transmission electron microscope (TEM), the chemical stability of a CdTe/GaAs interface is confirmed, as predicted by the Ga-As-Cd-Te quaternary phase diagram. Crisp, near-atomic-resolution video imaging is obtained at an annealing temperature of 500°C. Not only are the above results in complete agreement with ex situ annealing of the CdTe/GaAs heterojunction, but also direct observations of dynamic events occuring at the atomic level are recorded in real-time. Sublimation at the edge of a CdTe {111} thin film occurs via a ledge mechanism. Instead of a steady progression of this solid-vapor reaction, one obtains a real-time impression of dynamic equilibrium between vaporization and recondensation as atoms from the surface disappear and reappear several times before their ultimate removal.
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References
M. B. Panish, J. Electrochem. Soc. 114, 91 (1967).
J. C. Woolley and B. A. Smith, Proc. Phys. Soc. (London) 72, 867 (1958).
J. C. Bravman and R. Sinclair, J. Electron Microsc. Technique 1, 53 (1984).
R. C. Bean et al., J. Vac. Sci. Technol. A4, 2153 (1986).
J. Petruzzello et al., Appl. Phys. Lett. 50, 1423 (1987).
K. Maeda et al., J. Appl. Phys. 56, 554 (1984).
R. Sinclair et al., Nature 298, 127 (1982).
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Schwartzman, A., Sinclair, R. Hrem In Situ Annealing of the CdTe/GaAs Heterojunction. MRS Online Proceedings Library 139, 205–210 (1988). https://doi.org/10.1557/PROC-139-205
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DOI: https://doi.org/10.1557/PROC-139-205