Hexagotnal Silicon: A New Hrem Study

Abstract

A new high resolution electron microscopy investigation of indentationinduced hexagonal silicon has been carried out using the JEOL 4000EX electron microscope. The better resolution of the microscope enables one to extract more structural information about this intriguing phase and its interface with the cubic phase. A new structural model for the cubic/- hexagonal interface is presented. Image simlations are carried out over a wide range of thickness and defocus for the new model and also a previous model due to Tan et al.

This is a preview of subscription content, access via your institution.

References

  1. [1]

    V. G. Eremenko and V. I. Nikitenko, Phys. Stat. Sol. (a) 14, 317, (1972).

    CAS  Article  Google Scholar 

  2. [2]

    T. Y. Tan, H. Foll, and S. M. Hu, Phil. Mag. A 44, 127 (1981).

    CAS  Article  Google Scholar 

  3. [3]

    P. Pirouz, R. Chaim, and J. Samuels, Proc. 5th Intn. Congress on ‘The Structure and Properties of Dislocations in Semiconductors’, Moscow, U.S.S.R., March 1986, in press; Izvestiya Nauk Akademiya S.S.S.R. 51, 753 (1987). (In Russian).

  4. [4]

    G. F. Cerofolini, L. Meda, G. Queirolo, A. Armigliato, S. Solmi, F. Nava, and G. Ottaviani, J. Appl. Phys. 56 2981 (1984).

    CAS  Article  Google Scholar 

  5. [5]

    F. F. Komarov, A. P. Novikov, T. T. Samoilyuk, V. S. Solov’yev, and S. Yu Shiryaev, Rad. Eff. 90 307 (1985).

    CAS  Article  Google Scholar 

  6. [6]

    M. Servidori et al., Appl. Phys. A 44, 213 (1987).

    Article  Google Scholar 

  7. [7]

    M. Servidori et al., Nucl. Instrum. Methods Phys. Res. B19/20, 317 (1987).

    Article  Google Scholar 

  8. [8]

    J. L. Demenet, J. Rabier, and H. Garem, in “Microscopy of Semiconducting Materials, 1987’, Ed. A. G. Cullis and P. D. Augustus, Inst. Phys. Conf. Ser. No. 87, pp 355–360 (1987).

  9. [9]

    A. Bourret, in “Microscopy of Semiconducting Materials, 1987’, Ed. A. G. Cullis and P. D. Augustus, Inst. Phys. Conf. Ser. No. 87, pp 39–48 (1987).

  10. [10]

    H. Bender and J. Vanhellemont, Phys. Stat. Sol. (a), 107, 455 (1988).

    CAS  Article  Google Scholar 

  11. [11]

    P. Pirouz, R. Chaim, and U. Dahmen, Mat. Res. Soc. Symp. Proc. 104, 133 (1988).

    CAS  Article  Google Scholar 

  12. [12]

    P. Pirouz, R. Chaim, U. Dahmen, and K. H. Westmacott, to be submitted to Acta Met. (1988).

  13. [13]

    U. Dahmen, K. H. Westmacott, P. Pirouz, and R. Chaim, to be Submitted to Acta Met. (1988).

  14. [14]

    P. Pirouz, U. Dahmen, K. H. Westmacott, and R. Chaim, to be Submitted to Acta Met. (1988).

  15. [15]

    U. Dahmen, C. J. Hetherington, P. Pirouz, and K. H. Westmacott, Submitted to Scripta Met. (1988).

  16. [16]

    M. A. O’Keefe and P. R. Buseck, Trans. Am. Crystallogr. Assoc. 15, 27 (1979).

    Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to P. Pirouz.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Pirouz, P., Yang, J., Ernst, F. et al. Hexagotnal Silicon: A New Hrem Study. MRS Online Proceedings Library 139, 199–204 (1988). https://doi.org/10.1557/PROC-139-199

Download citation