High Resolution Observation and Image Simulation on Cleaved Wedges of III–V Semiconductors

Abstract

The observation of III–V multilayered semiconductors on 900 cleaved wedges is an interesting alternative to the conventional TEM observation on cross-sectioned samples. It offers a fast specimen preparation, the absence of ion irradiation damage or preferential etching, and a well controlled thickness across the sample. HREM observations are used to derive the layer thickness down to the atomic level. Image simulations were calculated with EMS programs on wedges described by a supercell.

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Correspondence to P. A. Buffat.

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Buffat, P.A., Ganiere, J.D. & Stadelmann, P. High Resolution Observation and Image Simulation on Cleaved Wedges of III–V Semiconductors. MRS Online Proceedings Library 139, 111–116 (1988). https://doi.org/10.1557/PROC-139-111

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