The growth of ZnSe on GaAs substrates by metalorganic chemical vapor deposition was investigated in a specially designed vertical downflow reactor. Dimethylzinc was used as the Zn source while different Se source compounds (hydrogen selenide (H2Se), diethylselenide and methylallylselenide) were employed to determine the effect of different source combinations on morphology, thickness uniformity, growth rate, electrical properties and photoluminescence (PL) characteristics of the grown ZnSe films. The H2Se was produced in situ by reaction of H2 and Se followed by distillation to control the amount of H2Se entering the reaction zone. H2Se produced very high mobility films with good PL spectra but poor surface morphology. Diethylselenide led to layers of good morphology and PL characteristics but the films were highly resistive. Unusual surface features were observed for methylallylselenide.
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Giapis, K.P., Da-Cheng, L. & Jensen, K.F. Effects of the Selenium Precursor on the Growth of ZnSe by Metalorganic Chemical Vapor Deposition. MRS Online Proceedings Library 131, 63 (1988). https://doi.org/10.1557/PROC-131-63