The direct photo-CVD of silicon dioxide on c-Si substrates has been achieved using a new combination of Si2H6 and N2O3 gases, with an external deuterium lamp as the VUV source. The variation of the deposition rate and the refractive index with process parameters is reported. FTIR studies on these oxides show that the oxide is very nearly stoichiometric with no Si-N bonds and only trace amounts of Si-H bonds. C-V, I-V and breakdown measurements made on these films are reported. a-Si:H thin film transistors have also been fabricated using this oxide as the gate dielectric.
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Bhatnagar, Y.K., Milne, W.I. The Direct Photo-CVD of Silicon Dioxide from Si2H6 and N2O3. MRS Online Proceedings Library 131, 513 (1988). https://doi.org/10.1557/PROC-131-513