Chemical Vapor Deposition of Chromium Carbide from Organometallic Precursors

MRS Online Proceedings Library volume 131, Article number: 439 (1988) Cite this article

Abstract

Chemical vapor deposition from CpCr(CO)3H, Cr(CH2CMe3)4, and Cr(NPri 2)3 at low pressures yields chromium carbide films at temperatures as low as 330 °C. The films are mirror-bright and extremely smooth with no significant features observable by SEM. In general, films prepared at higher temperatures had lower resistivities, and were more likely to be crystalline than those prepared at lower temperatures. However, amorphous films deposited at 330 °C were much harder than the crystalline films. Chemical vapor deposition from Cr(NPri 2)3 resulted in carbide films with the most desirable properties.

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  1. IBM Almaden Research Center, 650 Harry Road, 95120, San Jose, CA, USA

    N. M. Rutherford, C. E. Larson & R. L. Jackson

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  1. N. M. Rutherford
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  2. C. E. Larson
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  3. R. L. Jackson
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Correspondence to N. M. Rutherford.

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Rutherford, N.M., Larson, C.E. & Jackson, R.L. Chemical Vapor Deposition of Chromium Carbide from Organometallic Precursors. MRS Online Proceedings Library 131, 439 (1988). https://doi.org/10.1557/PROC-131-439

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