Abstract
Cobalt silicide films have been deposited by chemical vapor deposition using Co2 (CO)8 or HCo(CO)4 as the Co source and SiH4 or Si2 H6 as the Si source. The Co:Si ratio of the films increases with the deposition temperature, and CoSi2 stoichiometry is obtained at 300° C using SiH4 or at 225° C when Si2 H6 is the Si precursor. Resistivities of films deposited in the range CoSi2.0 to CoSi3.0. are typically 200 microohm-cm and drop to 30 – 40 microohm-cm upon annealing at 900° C.
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West, G.A., Beeson, K.W. Chemical Vapor Deposition of Cobalt Silicide. MRS Online Proceedings Library 131, 389 (1988). https://doi.org/10.1557/PROC-131-389
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DOI: https://doi.org/10.1557/PROC-131-389