The chemical kinetics of Silicon Rich Oxide (SRO) growth in a N2O-SiH4 LPCVD reactor has been studied at deposition temperatures from 610 to 680°C and pressures from 0.4 to 0.5 torr. We can produce SRO films with a wide spectrum of input reactant ratios γ = [N2O]/[SiH4] = 1 to 40. The dependence of film composition on γ changes dramatically in a region around γ = 2.
Growth for γ < 2 is consistent with the chemical kinetics of SIPOS growth. Growth for γ > 20 can be explained by oxidation of silicon in the bulk of the growing SRO film. We can explain growth from γ ≈ 4 to 20 by considering the chemical kinetics of possible binary surface reactions which may produce Si-Si or Si-O bonds. This allows us to accurately model the dependence of SRO growth rate in this region as a function of γ, pressure, and deposition temperature.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
T. Matsushita et al., Jap. J. Appl. Phys. Supplement, 15, 35 (1976).
D.J. DiMaria et al., J. Appl. Phys., 54, 5801 (1983).
D.J. DiMaria, K.M. DeMeyer, and D.W. Dong, IEEE Elec. Dev. Lett. EDL-1, 179 (1980).
M.L. Hitchman and J. Kane, J. of Crystal Growth, 55, 485 (1981).
H. Hamasaki et al., J. Appl. Phys., 49, 3987 (1978).
K-T Chang, C. Lam, and K. Rose, Mat. Res. Soc. Symp. Proc., 105, 193 (1988).
K-T Chang, C. Lam, and K. Rose, Mat. Res. Soc. Symp. Proc., 106, 107 (1988).
M.L. Hitchman, J. Kane, and A.E. Widmer, Thin Solid Films 59, 231 (1979).
About this article
Cite this article
Lam, C.H., Rose, K. Chemical Kinetics of Silicon-Rich Oxide Growth in an LPCVD Reactor. MRS Online Proceedings Library 131, 281 (1988). https://doi.org/10.1557/PROC-131-281