Laser Studies of the SiH Radical/Surface Interaction During Deposition of a thin Film

Abstract

This paper presents a new method for studying the interaction of radicals with the surface of a depositing film using a combination of laser spectroscopy and molecular beam techniques. The reactivity of SiH molecules with the surface of a depositing a-Si:H film is measured to be at least 0.95, with no strong dependence on rotational state.

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Correspondence to Pauline Ho.

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Ho, P., Buss, R.J. & Breiland, W.G. Laser Studies of the SiH Radical/Surface Interaction During Deposition of a thin Film. MRS Online Proceedings Library 131, 233 (1988). https://doi.org/10.1557/PROC-131-233

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