Pulsed Ion Beam Interface Melting of PtCr and CrTa Alloys on Si Structures

Abstract

Composition profiles of thermal and pulsed ion beam annealed PtCr/Si and CrTa/Si have been determined using Rutherford backseattering analysis. Thermal annealing resulted in layered phase separation with Pt-silicide in the PtCr/Si case, and CrSi2 in the CrTa/Si case, forming at the Si surface. Pulsed ion beam annealing, 300–380 keV protons at energy densities ~0.75–1.6 J/cm2, produced interface melting with no layered phase separation.

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Acknowledgments

Thanks are due to K. N. Tu and M. Eizenberg (IBM, Yorktown Heights) for supplying PtCr/Si prepared at the IBM Central Services Facility, D. Campbell (IBM, East Fishkill) for supplying the CrTa/Si samples and D. A. Hammer (Cornell) for the use of the pulsed ion beam facility. The authors wish to acknowledge J. W. Mayer and J. Gyulai for encouragement and helpful discussions. This work was supported in part by the Defense Advanced Research Projects Agency through the U.S. Office of Naval Research (L. Cooper). The ion beam facility was supported in part by ONR (Contract N00173-79-C-0085).

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Palmstrom, C.J., Fastow, R. Pulsed Ion Beam Interface Melting of PtCr and CrTa Alloys on Si Structures. MRS Online Proceedings Library 13, 715–720 (1982). https://doi.org/10.1557/PROC-13-715

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