Thermal Pulse Annealing of Hg1−xCdxTe

Abstract

Thermal pulse annealing has been used to modify the near surface of Hg1−xCdxTe. Using anneals of approximately 260°C for seven seconds, the crystal quality of epitaxial HgCdTe surfaces can be improved as observed by MeV He+ ion channeling. Similar anneals have also been used to repair the damage resulting from a 250 keV, 101511B/cm2 implant into HgCdTe held at LN2. For higher temperatures and/or longer anneals, surface Hg loss is observed. Rutherford Backscattering measurements are used to measure this loss. The resulting loss rate data is described by N= A exp (−∆E/kT) where A and ∆E depend on the material composition with A = 1029, ∆E = 1.8 eV and A = 1036, ∆E = 2.6 eV for x = 0.23 and 0.4, respectively.

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Acknowledgments

We would like to thank the Defense Advanced Research Projects Agency, (MDA-903-80-C-0238), in particular S. Roosild and R. Reynolds for their support of this work, Rockwell International for the epitaxial HgCdTe and Texas Instruments, Honeywell and Santa Barbara Research Center for the bulk HgCdTe. K. Dimiduk would also like to thank the National Science Foundation for fellowship support.

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Formerly under maiden name K. L. Conway.

Also with Lockheed Palo Alto Research Laboratory, Palo Alto, CA 94304.

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Dimiduk, K.C., Opyd, W.G., Greiner, M.E. et al. Thermal Pulse Annealing of Hg1−xCdxTe. MRS Online Proceedings Library 13, 671–676 (1982). https://doi.org/10.1557/PROC-13-671

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