The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Studies of XeCl excimer laser annealing with pulses of 25 and 70 nsec duration and energy densities in the range from 0.5–3.0 J/cm2 are discussed. The annealing characteristics are described in terms of the results of melt depth, dopant profile spreading, and electrical properties (sheet resistivity, diode characteristics) measurements. Solar cells with efficiencies as high as 16.7% AM1 have been fabricated using glow discharge implantation and XeCl laser annealing.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
R. T. Young, G. A. van der Leeden, J. Narayan, W. H. Christie, R. F. Wood, D. E. Rothe, and J. I. Levatter, IEEE Elec. Dev. Lett. EDL-3, 280 (1982).
D. H. Lowndes, J. W. Cleland, W. H. Christie, R. E. Eby, G. E. Jellison, Jr., J. Narayan, R. D. Westbrook, R. F. Wood, J. A. Nilson, and S. C. Dass, Appl. Phys. Lett. 41, 938 (1982).
R. T. Young, G. A. van der Leeden, R. F. Wood, and R. D. Westbrook, Proceedings of the 16th IEEE Photovoltaic Specialists Conference (September 27–30, 1982, San Diego, CA) (to be published).
G. E. Jellison, Jr., and F. A. Modine, Appl. Phys. Lett. 41, 180 (1982).
R. T. Young, G. A. van der Leeden, R. D. Westbrook, R. L. Sandstrom, and J. I. Levatter, Proceedings of the 16th IEEE Photovoltaic Specialists Conference (September 27–30, 1982, San Diego, CA) (to be published).
R. F. Wood and G. E. Giles, Phys. Rev. B 23, 2923 (1981).
J. Narayan, R. T. Young, R. F. Wood, and W. H. Christie, Appl. Phys. Lett. 33, 338 (1978).
R. T. Young, R. F. Wood, and W. H. Christie, J. Appl. Phys. 53, 1178 (1982).
The authors would like to thank R. F. Wood for his careful reading of the manuscript and helpful suggestions.
Research sponsored jointly by the Solar Energy Research Institute under contract BS-0-9078-1 and by Helionetics, Inc.
Operated by Union Carbide Corporation under contract W-7405-eng-26 with the U.S. Department of Energy.
About this article
Cite this article
Young, R.T., Narayan, J., Christie, W.H. et al. Effect of Pulse Duration on the Annealing of Ion Implanted Silicon with a XeCl Excimer Laser and Solar Cells. MRS Online Proceedings Library 13, 401–406 (1982). https://doi.org/10.1557/PROC-13-401