Effect of Pulse Duration on the Annealing of Ion Implanted Silicon with a XeCl Excimer Laser and Solar Cells

Abstract

The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Studies of XeCl excimer laser annealing with pulses of 25 and 70 nsec duration and energy densities in the range from 0.5–3.0 J/cm2 are discussed. The annealing characteristics are described in terms of the results of melt depth, dopant profile spreading, and electrical properties (sheet resistivity, diode characteristics) measurements. Solar cells with efficiencies as high as 16.7% AM1 have been fabricated using glow discharge implantation and XeCl laser annealing.

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Acknowledgment

The authors would like to thank R. F. Wood for his careful reading of the manuscript and helpful suggestions.

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Research sponsored jointly by the Solar Energy Research Institute under contract BS-0-9078-1 and by Helionetics, Inc.

Operated by Union Carbide Corporation under contract W-7405-eng-26 with the U.S. Department of Energy.

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Young, R.T., Narayan, J., Christie, W.H. et al. Effect of Pulse Duration on the Annealing of Ion Implanted Silicon with a XeCl Excimer Laser and Solar Cells. MRS Online Proceedings Library 13, 401–406 (1982). https://doi.org/10.1557/PROC-13-401

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