A brief history and present state of beam processing techniques and applications to silicon integrated circuit technology are given. The viability of incorporating pulselaser controlled doping profiles into the emitter-base structure of an advanced bipolar transistor is discussed. The areas of present I.C. technology which will constrain future device development are identified, and the contribution that beam processing can make in removing these constraints is discussed. The beam processing techniques most likely to be found in future I.C. technologies are described.
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I thank my colleague, Alan Butler, for permission to use some of our unpublished material and Plessey Research (Caswell) for permission to publish. This work has been carried out with the support of the Procurement Executive MOD, sponsored by D.C.V.D.
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Hill, C. The Contribution of Beam Processing to Present and Future Integrated Circuit Technologies. MRS Online Proceedings Library 13, 381–392 (1982). https://doi.org/10.1557/PROC-13-381