Impurity Distribution Profiles and Surface Disorder after Laser Induced Diffusion

Abstract

A model for laser induced diffusion is proposed, assuming the melting of Si surface under pulsed laser irradiation and the diffusion, in liquid phase, of a thin filmof impurity deposited according to the “limited source” conditions. Depending on the thickness of the film, it results in a dopant distribution profile with a surface disordered layer induced either by segregation effects or precipitation of the dopant in excess of the solubility limit achieved by laser annealing. Experimental results, obtained for a ruby laser irradiation of thin films of different impurities of group III and V, like antimony, bismuth, gallium and indium deposited on silicon substrates are in good agreement with the model. Their effective segregation coefficients have been deduced by fitting the experimental amount of dopant precipitated in the disordered surface layer with the numerical calculations. A cellular structure is seen on surface.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    J. Narayan, RT Young, and R. F. Wood, Applied Phys. Lett. 33 (4), 338 (1978)

    CAS  Article  Google Scholar 

  2. 2.

    E. Fogarassy, R. Stuck, J. J. Grob and P. Siffert, J. Appl. Phys. 52 (2), 1076 (1981)

    CAS  Article  Google Scholar 

  3. 3.

    E. Fogarassy, R. Stuck, J. J. Grob and P. Siffert “Laser and Electron Beam Processing of Materials” edited by C.W. White and P. S. Peercy, Academic Press (1980) p. 117.

  4. 4.

    P. Baeri, S. U. Campisano, G. Foti and E. Rimini, J. Appl. Phys. 50 (2) 788 (1979).

    CAS  Article  Google Scholar 

  5. 5.

    C. W. White, S.R. Wilson, B.R. Appleton and F.W. Young Jr., J. Appl. Phys. 51 (1) 738 (1980).

    CAS  Article  Google Scholar 

  6. 6.

    Monographie sur les métaux de haute pureté, G. Chaudron, Masson Paris 1972.

  7. 7.

    M. Toulemonde and R. Heddache, Private Communication

  8. 8.

    J. Crank, The mathematics of diffusion - Oxford at the Clarendon Press (1956)

    Google Scholar 

  9. 9.

    H. Kodera Jpn J. Appl. Phys. 2, 212 (1963)

    CAS  Article  Google Scholar 

  10. 10.

    J. C. Wang, R. F. Wood, C. W. White, B. R. Appleton, P. P. Proko, S. R. Wilson and W.H. Christie, The proceedings of the Boston Conference on “Laser Solid interactions and Laser processing - 1978” edited by S.D. Ferris, H. J. Leamy, and J. M. Poate. AIP Conf. 50 (1979) p. 123

    CAS  Google Scholar 

  11. 11.

    F. A. Trumbore Bell Syst. Techn. J. 39, 205 (1960)

    Article  Google Scholar 

  12. 12.

    J.C. Baker and J. W. Cahn, Acta Met. 17 (1969)

  13. 13.

    K. A. Jackson, G. H. Gilmer and H. J. Leamy “Laser and electron beam processing of materials” edited by C.W. White and P. S. Peercy Academic Press (1980) p. 104.

  14. 14.

    R. Stuck, E. Fogarassy, J. J. Grob and P. Siffert, Appl. Phys. 23, 15 (1980).

    CAS  Article  Google Scholar 

  15. 15.

    S. U. Campisano, P. Baeri, M. G. Grimaldi, G. Foti and E. Rimini, J. Appl. Phys. 51 (7), 3968 (1980).

    CAS  Article  Google Scholar 

  16. 16.

    G. J. Van Gurp, G. E. Eggermont, Y. Tamminga, W. T. Stacy and J. R. M. Gijsbers Appl. Phys. Lett. 35 (3), 273 (1979).

    Article  Google Scholar 

  17. 17.

    J. Narayan, J. Appl. Phys. 53 (3), 1289 (1981).

    Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Fogarassy, E., Stuck, R., Siffert, P. et al. Impurity Distribution Profiles and Surface Disorder after Laser Induced Diffusion. MRS Online Proceedings Library 13, 311–316 (1982). https://doi.org/10.1557/PROC-13-311

Download citation