The nature of residual damage in As+, Sb+, and In+ implanted silicon after CW laser and e− beam annealing has been studied using plan-view and cross-section electron microscopy. Lattice location of implanted atoms and their concentrations were determined by Rutherford backscattering and channeling techniques. Maximum substitutional concentrations achieved by furnace annealing in a temperature range of 500–600°C have been previously reported  and greatly exceeded the retrograde solubility limits for all dopants studied. Higher temperatures and SPE growth rates characteristic of electron or cw laser annealing did not lead to greater incorporation of dopant within the lattice and often resulted in dopant precipitation. Dopant segregation at the surface was sometimes observed at higher temperatures.
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Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.
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Narayan, J., Holland, O.W. & Olson, G.L. Solid-Phase-Epitaxial Growth of Ion Implanted Silicon Using CW Laser and Electron Beam Annealing. MRS Online Proceedings Library 13, 155–163 (1982). https://doi.org/10.1557/PROC-13-155