Charged Dangling Bonds and Crystallization in Group IV Semiconductors

Abstract

Crystallization of amorphous Ge (or Si) has been studied as a function of temperature and the flux of ionizing radiation (or doping). The crystallization growth rate Vg takes on the form Vg = vo exp(-E/kT) where vo is an increasing function of flux (or doping). We propose the following to explain these data: A concentration of mobile dangling bonds (DBs) exists in the bulk and near the amorphous-crystalline (a-c) interface. Ionization and doping induce transitions from the uncharged state D° to the charged states D+ and D. The process controlling crystallization resulting in the above activation energy is discussed. Only certain sites on the a-side of the a-c interface are available for crystallization, and these sites are those which have captured DBs. The charged D+ and D states have a larger capture cross section than the uncharged Do state. Increased concentrations of charged DBs results in an enhancement of the prefactor in the above equation.

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References

  1. 1.

    Laser and Electron-Beam Solid Interactions and Materials Processing, J. F. Gibbons, L. D. Hess and T. W. Sigmon, eds., North-Holland, NY 1980.

    Google Scholar 

  2. 2.

    Laser and Electron-Beam Interactions with Solids, B. R. Appleton and G. K. Celler, eds., North-Holland, NY 1981.

    Google Scholar 

  3. 3.

    M. Wautelet, L. D. Laude and R. Andrews, Physics Letters 77A, 274 (1980).

    CAS  Article  Google Scholar 

  4. 4.

    A Barna, P. Barna and J. Pocze, J. Non-Cryst. Solids 8, 36 (1972)

    Article  Google Scholar 

  5. 5.

    P. Germain, S. Squelard and J. Bourgoin, J. Non-Cryst. Solids 23, 159 (1977) and Radiation Effects in Semiconductors, Dubrovnik 1976, N. Urli and J. Corbett eds.

    CAS  Article  Google Scholar 

  6. 6.

    L. Laude and R. Willis, AIP Conf. Proc. No. 20, P. 65 (1975).

    Google Scholar 

  7. 7.

    P. Germain, K. Zellama, S. Squelard, J. Bourgoin and A. Gheorghiu, J. Appl. Phys. 50, 6986 (1979).

    CAS  Article  Google Scholar 

  8. 8.

    P. Germain and S. Squelard, to be published.

  9. 9.

    L. Csepregi, E. Kennedy, T. Gallagher, J. Mayer and T. Sigmon, J. Appl. Phys. 48, 4241 (1977).

    Article  Google Scholar 

  10. 10.

    The error in activation energies from reference 9 stems principally from the RBS instrument resolution of 20 keV (434 Å in depth), which results in an error in the determination of the activation energy of ~0.2 eV based on a leastsquares fit to a straight line on the Arrhenius plot.

  11. 11.

    A. Lietoila, R. B. Gold and J. F. Gibbons, Appl. Phys. Lett. 39, 810 (1981).

    CAS  Article  Google Scholar 

  12. 12.

    S. Kokorowski, G. Olson and L. Hess, J. Appl. Phys. 53, 921 (1982) and references to earlier work sited therein.

    CAS  Article  Google Scholar 

  13. 13.

    P. Germain and M. A. Paesler, to be published.

  14. 14.

    N. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials, 2nd edition (Clarendon Press, Oxford) 1979.

    Google Scholar 

  15. 15.

    Applying error bars of earlier Hughes work to the data of ref. 11, one cannot make firm conclusions about the combined effects of doping and irradiation.

  16. 16.

    P. Thomas, M. Brodsky, D. Kaplan and D. Lepine, Phys. Rev. B 18, 3059 (1978).

    CAS  Article  Google Scholar 

  17. 17.

    D. Kaplan, private communication.

  18. 18.

    J. Mayer in Thin Films, Preparation and Properties, K. Rosenberg, ed., Pasadena, CA (1981).

  19. 19.

    K. Zellama, P. Germain, S. Squelard, J. Bourgoin and P. Thomas, J. Appl. Phys. 50, 6995 (1979).

    CAS  Article  Google Scholar 

  20. 20.

    W. A. Harrison, Surface Science 55, 1 (1976).

    CAS  Article  Google Scholar 

  21. 21.

    D. Chadi, Phys. Rev. Letters 43, 43 (1979).

    CAS  Article  Google Scholar 

  22. 22.

    L. Csepregi, E. F. Kennedy and J. W. Mayer, J. Appl. Phys. 49, 3906 (1978).

    CAS  Article  Google Scholar 

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on leave from University Paris VII, address above

MAP acknowledges the support of the General Electric Corporation.

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Germain, P.J., Paesler, M.A., Sayers, D.E. et al. Charged Dangling Bonds and Crystallization in Group IV Semiconductors. MRS Online Proceedings Library 13, 135–140 (1982). https://doi.org/10.1557/PROC-13-135

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