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Survey of the Thermodynamics and Kinetics of Crystallization of Si and Ge

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Abstract

The thermodynamic interrelations of the crystalline (c-sc), amorphous semiconducting (a-sc) and liquid metal (ℓm) states of Si and Ge, based on the existing thermal data, are reviewed. Then the kinetics of the interfacial processes in the growth of c-sc and a-sc into undercooled ℓm and the conditions for transition from c-sc to a-sc growth are discussed.

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Acknowledgment

This paper was written during the author’s 1982 stay at the National Bureau of Standards as a visiting Scientist in the Center for Materials Science. It is based on research supported in part by a Harvard NSF grant NSF DMR-80-12933 and N.B.S.

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Authors and Affiliations

  1. Division of Applied Sciences, Harvard University, Cambridge, MA, 02138, USA

    D. Turnbull

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  1. D. Turnbull
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Turnbull, D. Survey of the Thermodynamics and Kinetics of Crystallization of Si and Ge. MRS Online Proceedings Library 13, 131–134 (1982). https://doi.org/10.1557/PROC-13-131

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  • DOI: https://doi.org/10.1557/PROC-13-131

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