Substrate Latent Heat Effects in the Calculations for Pulsed Laser Irradiated Thin Films

MRS Online Proceedings Library volume 13, pages117–122(1982)Cite this article

Abstract

We present a numerical model for the calculation of the temperature rise caused by pulsed laser irradiation of a thin film/substrate structure. This model includes phase changes in both the thin film and the substrate. The inclusion of phase changes results in more complex thermal behavior and significantly affects melt durations. This model was applied to the AuGe/GaAs system. Morphological observation using the scanning electron microscope and SIMS profiles provides experimental verification for the numerical calculations.

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Affiliations

  1. Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York, 12181

    J. J. Cao & K. Rose

  2. Corporate Research and Development, General Electric, Schenectady, New York, 12309

    O. Aina, W. Katz & J. Norton

Authors
  1. J. J. Cao
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  2. K. Rose
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  3. O. Aina
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  4. W. Katz
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  5. J. Norton
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Cao, J.J., Rose, K., Aina, O. et al. Substrate Latent Heat Effects in the Calculations for Pulsed Laser Irradiated Thin Films. MRS Online Proceedings Library 13, 117–122 (1982). https://doi.org/10.1557/PROC-13-117

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