Abstract
We present a numerical model for the calculation of the temperature rise caused by pulsed laser irradiation of a thin film/substrate structure. This model includes phase changes in both the thin film and the substrate. The inclusion of phase changes results in more complex thermal behavior and significantly affects melt durations. This model was applied to the AuGe/GaAs system. Morphological observation using the scanning electron microscope and SIMS profiles provides experimental verification for the numerical calculations.
Similar content being viewed by others
References
J.F. Ready, J. Appl. Phys. 3b, 462 (1965).
C.M. Surko, et al., Appl. Phys. Lett. 34, 635 (1979).
R.F. Wood, G.E. Giles, Phys. Rev. B 23, 2923 (1981).
D. Maydan, Bell Sys. Tech. J., 50, 1761 (1971).
H.G. Parks, Ph.D. Thesis, Renssealer Polytechnic Institute, (1980).
O. Aina, W. Katz, G. Smith, R. Norton, K. Rose, “Laser and Electron Beam Interactions with Solids”, B.R. Appleton and G.K. Cellar, eds. (North-Holland, NY 1982) p. 671.
R.B. Fair, J. Appl. Phys. 50, 6552 (1979).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Cao, J.J., Rose, K., Aina, O. et al. Substrate Latent Heat Effects in the Calculations for Pulsed Laser Irradiated Thin Films. MRS Online Proceedings Library 13, 117–122 (1982). https://doi.org/10.1557/PROC-13-117
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-13-117