Abstract
We have produced beveled cross-sections of GaAs/GaAlAs multiple quantum well structures with inclination angles of O.55 minutes of arc with a special ion beam etching technique. The extension of the damage which is induced during the dry etching process can be evaluated directly by a comparison of spatially resolved secondary ion mass spectroscopy and photoluminescence measurements. We observe a thickness of the damaged surface layer between 36 nm for 250 eV Argon ions and 160 nm for 1000 eV Argon ions in a GaAs/GaAlAs multiple quantum well structure.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A.R. Reinberg, in VLSI Electronics Microstructure Science, edited by N.G. Einspruch, (Academic Press, New York, 1981), pp. 2-35
A. Scherer, H.G. Craighead, M.L. Roukes, and J.B. Harbison, J. Vac. Sci. Techn. B 6(1), 277 (1988)
Y. Yuba, T. Ishida, K. Gamo, and S. Namba, J. Vac. Sci. Techn. B 6(1), 253 (1988)
J.F. Ziegler, J.P. Biersack, and U. Littmark, in The Stopping and Range of Ions in Solids, edited by J.F. Ziegler (Pergamon Press, New York, 1985)
R. Germann, and A. Forchel in Growth, Characterization, Processing, of III-V Materials with Correlations to Device Performances, edited by Y.I. Nissim, and P.A. Glasow, (European Mat. Res. Soc. Proc, Vol. XVI, Les Ulis Cedex, 1987), pp. 311-316
R. Germann, A. Forchel, and G. Weimann, Appl. Phys. A 47, (1988) in press
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Germann, R., Forchel, A., Hörcher, G. et al. Depth Profiling of Ion Beam Induced Damage in Semiconductor Heterostructures. MRS Online Proceedings Library 128, 749–754 (1988). https://doi.org/10.1557/PROC-128-749
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-128-749