We have produced beveled cross-sections of GaAs/GaAlAs multiple quantum well structures with inclination angles of O.55 minutes of arc with a special ion beam etching technique. The extension of the damage which is induced during the dry etching process can be evaluated directly by a comparison of spatially resolved secondary ion mass spectroscopy and photoluminescence measurements. We observe a thickness of the damaged surface layer between 36 nm for 250 eV Argon ions and 160 nm for 1000 eV Argon ions in a GaAs/GaAlAs multiple quantum well structure.
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Germann, R., Forchel, A., Hörcher, G. et al. Depth Profiling of Ion Beam Induced Damage in Semiconductor Heterostructures. MRS Online Proceedings Library 128, 749–754 (1988). https://doi.org/10.1557/PROC-128-749