Atomic Profiles and Electrical Characteristics of Very High Energy (8–20 MeV) Si Implants in GaAs

Abstract

High energy Si implantation into GaAs is of interest for the fabrication of fully implanted, monolithic microwave integrated circuits. Atomic concentration profiles of 8, 12, 16, and 20 MeV Si have been measured using SIMS. The range and shape parameters have been determined for each energy. The theoretical atomic concentration profile for 12 MeV Si calculated using TRIM-88 corresponded to the SIMS experimental profile. No redistribution of the Si was observed for either furnace anneal, 825°C, 15 min, or rapid thermal anneal, 1000°C, 10 s. The activation of the Si improved when co-implanted with S. The co-implanted carrier concentration profiles did not show dopant diffusion. Peak carrier concentration of 2x1018/cm3 was obtained with a Si and S dose of 1.5x1014cm2, each.

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References

  1. 1.

    P. E. Thompson, R. G. Wilson, D. C. Ingram, and P. P. Pronko in Materials Modification and Growth Using Ion Beams, edited by U. Gibson, P. P. Pronko, and A. E. White (Mater Res. Soc. Proc. 93 Pittsburgh, PA 1987) pp. 73-77.

  2. 2.

    P. E. Thompson, R. G. Wilson, D. C. Ingram, and P. P. Pronko, Accepted for publication in the J. Appl. Phys.

  3. 3.

    P. E. Thompson, H. B. Dietrich, and D. C. Ingram, Nucl. Instr. and Meth. B6, 287 (1985)

    CAS  Article  Google Scholar 

  4. 4.

    P. E. Thompson, H. B. Dietrich, M. Spencer, and D. C. Ingram, SPIE 530, 35 (1985).

    CAS  Google Scholar 

  5. 5.

    C. M. Krowne and P. E. Thompson, Solid State-Electron. 30. 497 (1987).

    CAS  Article  Google Scholar 

  6. 6.

    P. E. Thompson, H. B. Dietrich, Y. Anand, V. Higgins, and J. Hillson, Electronics Letters 23, 725 (1987).

    Article  Google Scholar 

  7. 7.

    J. F. Gibbons and S. Mylroie, Appl. Phys. Lett. 22, 568 (1973).

    CAS  Article  Google Scholar 

  8. 8.

    W. K. Hofker, Phillips Research Reports Supplements, 8, 41 (1975).

    Google Scholar 

  9. 9.

    W. K. Hofker, D. P. Oosthoek, N. J. Koeman,, and H. A. M. De Grefte, Rad. Effects 24, 223 (1975).

  10. 10.

    R. G. Wilson, Rad. Effects 46, 141 (1980).

    CAS  Article  Google Scholar 

  11. 11.

    J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping Power and Range of Ions in Solids (Pergammon Press Inc., New York, 1985).

  12. 12.

    S. J. Pearton and K. D. Cummings, J. Appl. Phys. 58(14), 1500 (1985).

  13. 13.

    R. G. Wilson and D. M. Jamba, Appl. Phys. Lett. 39, 715 (1981).

    CAS  Article  Google Scholar 

  14. 14.

    R. S. Bhattacharya, P. P. Pronko, and S. C. Ling, Appl. Phys. Lett. 42 42(10), 880 (1983).

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Thompson, P.E., Dietrich, H.B., Eridon, J.M. et al. Atomic Profiles and Electrical Characteristics of Very High Energy (8–20 MeV) Si Implants in GaAs. MRS Online Proceedings Library 128, 665–669 (1988). https://doi.org/10.1557/PROC-128-665

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