Ion-Beam-Induced Epitaxy and Solute Segregation at the Si Crystal-Amorphous Interface


Segregation and diffusion of impurities in amorphous Si during furnace and ion-beam-induced epitaxy will be discussed. The use of ion beams to enhance the crystal growth process has resulted in novel behavior for fast diffusers such as Au. Diffusion is enhanced in the temperature range 300-700 K with activation energies -0.3 eV. Segregation and trapping are analogous to behavior at liquid-solid interfaces.

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Poate, J.M., Jacobson, D.C., Priolo, F. et al. Ion-Beam-Induced Epitaxy and Solute Segregation at the Si Crystal-Amorphous Interface. MRS Online Proceedings Library 128, 533–544 (1988).

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