One of the advantages of the ion beam assisted deposition process is its controllability of the processing parameters such as: ion-to-atom arrival ratio and the ion energy. In this study, the effects of the nitrogen ion energy (from 1 KV to 30KV) on the TiN film morphology and microstructures were systematically investigated as a function of ion-to-atom arrival ratios, using TEM, XTEM, SEM, ESCA and other analytical techniques.
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Chang, A.L., Kant, R.A. Characterization of TiN Films Prepared by Ion Beam Assisted Deposition. MRS Online Proceedings Library 128, 433–438 (1988). https://doi.org/10.1557/PROC-128-433