Impact of a-Si:H structural properties on the annealing behavior of a-Si:H/c-Si heterostructures used as precursors for high-efficiency solar cells

Abstract

We analyze the dependence of the interface defect density Dit in amorphous/crystalline (a-Si:H/c-Si) heterostructures on the microscopic properties of the ultrathin (10nm) undoped a-Si:H films. It is shown that the hydrogen bonding configuration, probed by infrared spectroscopy, determines the a-Si:H network disorder, which in turn governs the annealing behavior of these structures upon a short thermal treatment at moderate temperatures (T ≤ 200°C). While the as-deposited Dit seems to be determined by the local structure at the interface, the final state of the annealed samples is determined by the bulk a-Si:H network strain as reflected in the valence band tail slope. Thus it appears valid to treat the equilibrated a-Si:H/c-Si interface as a 2D-layer that has the projected defect properties of the 3D a-Si:H bulk.

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Correspondence to T. F. Schulze.

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Schulze, T.F., Beushausen, H.N., Leendertz, C. et al. Impact of a-Si:H structural properties on the annealing behavior of a-Si:H/c-Si heterostructures used as precursors for high-efficiency solar cells. MRS Online Proceedings Library 1268, 107 (2010). https://doi.org/10.1557/PROC-1268-EE01-07

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