Optically Active Defects in an InAsP/InP Quantum Well Monolithically Integrated on SrTiO3 (001)

Abstract

The optical properties of an InAsP/InP quantum well grown on a SrTiO3(001) substrate are analyzed. At 13K, the photoluminescence (PL) yield of the well is comparable to that of a reference well grown on an InP substrate. Increasing the temperature leads to the activation of non-radiative mechanisms for the sample grown on SrTiO3. The main non-radiative channel is related to the thermal excitation of the holes in the first heavy hole excited state, followed by the non-radiative recombination of charge carriers on twins and/or domain boundaries, in the immediate vicinity of the well.

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Cheng, J., El Akra, A., Bru-Chevallier, C. et al. Optically Active Defects in an InAsP/InP Quantum Well Monolithically Integrated on SrTiO3 (001). MRS Online Proceedings Library 1252, 301 (2010). https://doi.org/10.1557/PROC-1252-J03-01

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