Optically Active Defects in an InAsP/InP Quantum Well Monolithically Integrated on SrTiO3 (001)

MRS Online Proceedings Library volume 1252, Article number: 301 (2010) Cite this article

Abstract

The optical properties of an InAsP/InP quantum well grown on a SrTiO3(001) substrate are analyzed. At 13K, the photoluminescence (PL) yield of the well is comparable to that of a reference well grown on an InP substrate. Increasing the temperature leads to the activation of non-radiative mechanisms for the sample grown on SrTiO3. The main non-radiative channel is related to the thermal excitation of the holes in the first heavy hole excited state, followed by the non-radiative recombination of charge carriers on twins and/or domain boundaries, in the immediate vicinity of the well.

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References

  1. 1

    P. Singer, Solid State Technology, IEDM (2009)

    Google Scholar 

  2. 2

    D. G. Deppe, N. Holonyak, Jr., D. W. Nam, K. C. Hsieh, G. S. Jackson, R. J. Matyi, H. Shichijo, J. E. Epler, H. F. Chung, Appl. Phys. Lett. 51, 637 (1987)

    CAS  Article  Google Scholar 

  3. 3

    S.M. Ting and E.A. Fitzgerald, J. Appl. Phys. 87, 2618, (2000).

    CAS  Article  Google Scholar 

  4. 4

    M. Kostrzewa, G. Grenet, P. Regreny, J.L. Leclercq, P. Perreau, E. Jalaguier, L. DiCioccio and G. Hollinger, J. Cryst. Growth 275, 157, (2005).

    CAS  Article  Google Scholar 

  5. 5

    S. J. B. Yoo, R. Bhat, C. Caneau, and M. A. Koza, Appl. Phys. Lett. 66, 3410, (1995)

    CAS  Article  Google Scholar 

  6. 6

    Y. Wang, C. Ganpule, B. T. Liu, H. Li, K. Mori, B. Hill, M. Wuttig, R. Ramesh, J. Finder, Z. Yu, R. Droopad, and K. Eisenbeiser, Appl. Phys. Lett. 80, 97, (2002)

    CAS  Article  Google Scholar 

  7. 7

    G. J. Norga, C. Marchiori, C. Rossel, A. Guiller, J. Appl. Phys. 99, 084102 (2006).

    Article  Google Scholar 

  8. 8

    K. Eisenbeiser, R. Emrick, R. Droopad, Z. Yu, J. Finder, S. Rockwell and J. Holmes, Electron. Dev. Lett. 23, 300, (2002)

    CAS  Article  Google Scholar 

  9. 9

    A. Giussani, P. Rodenbach, P. Zaumseil, J. Dabrowski, R. Kurps, G. Weidner, and T. Schroeder, J. Appl. Phys. 105, 033512 (2009)

    Article  Google Scholar 

  10. 10

    J.W. Seo, C. Dieker, A. Tapponier, C. Marchiori, M. Sousa, A.Ipsas, and A. Dimoulas, Microelec Eng. 84, 2328 (2007)

    CAS  Article  Google Scholar 

  11. 11

    G. Saint-Girons, J.Cheng, P. Regreny, L. Largeau, G. Patriarche and G. Hollinger, Phys. Rev.B, 80, 155038 (2009)

    Google Scholar 

  12. 12

    G. Saint-Girons, G, P. Regreny L. Largeau L, G. Patriarche, G. Hollinger Appl. Phys. Lett. 91, 241912 (2007).

    Article  Google Scholar 

  13. 13

    J. Cheng, P. Regreny, L. Largeau, G. Patriarche, P. Regreny, G. Saint-Girons, Appl. Phys. Lett. 94, 231902, (2009)

    Article  Google Scholar 

  14. 14

    P. J. Dean, Phys. Rev. 157, 655, (1967)

    CAS  Article  Google Scholar 

  15. 15

    G. Saint-Girons and I. Sagnes J. Appl. Phys. 91, 10115, (2002)

    CAS  Article  Google Scholar 

  16. 16

    Z. H. Lin, T. Y. Wang, G. B. Stringfellow and P. C. Taylor, Appl. Phys. Lett. 52, 1590, (1988)

    CAS  Article  Google Scholar 

  17. 17

    H. Lipsanen, M. Sopanen, J. Ahopelto, J. Sandmann and J. Feldmann, Jpn. J. Appl. Phys. Part 1 38, 1133, (1999)

    Article  Google Scholar 

  18. 18

    B.T.Seaman, L.D.Carr and M.J.Holland Phys.Rev.A 71, 033622(2005)

    Article  Google Scholar 

  19. 19

    G. Saint-Girons, C. Priester, P. Regreny and al. Appl. Phys. Lett. 92, 241907 (2008)

    Article  Google Scholar 

  20. 20

    G. Saint-Girons1, J. Cheng, P. Regreny, L. Largeau, G. Patriarche, and G. Hollinger Phys.Rev.B 80, 155308 (2009)

    Article  Google Scholar 

  21. 21

    J. Cheng, P. Regreny, L. Largeau, G. Patriarche, O. Mauguin, K. Naji, G. Hollinger, G. Saint-Girons, J. Cryst. Growth 311, 1042, (2009).

    CAS  Article  Google Scholar 

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Affiliations

  1. Ecole Centrale de Lyon, Université de Lyon; Institut des Nanotechnologies de Lyon INL-UMR5270-CNRS, 36 avenue Guy de Collongue, 69134, Ecully, France

    J. Cheng, A. El Akra, C. Bru-Chevallier, P. Regreny, G. Hollinger & G. Saint-Girons

  2. LPN-UPR20/CNRS, route de Nozay, 91460, Marcoussis, France

    G. Patriarche & L. Largeau

Authors
  1. J. Cheng
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  2. A. El Akra
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  3. C. Bru-Chevallier
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  4. G. Patriarche
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  5. L. Largeau
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  6. P. Regreny
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  7. G. Hollinger
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  8. G. Saint-Girons
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Cheng, J., El Akra, A., Bru-Chevallier, C. et al. Optically Active Defects in an InAsP/InP Quantum Well Monolithically Integrated on SrTiO3 (001). MRS Online Proceedings Library 1252, 301 (2010). https://doi.org/10.1557/PROC-1252-J03-01

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