A new type of silicon-based Vertical MOSFET concept is presented, Single-Device CMOS (SD-CMOS), in which the same structure can be operated as NFET or as PFET, depending on the biasing conditions [1,2]. SD-CMOS offers new possibilities for simpler CMOS integration schemes; one of them requiring only 4 masks for the “Front-End”; with less cost to manufacture than any integration scheme requiring the fabrication of two devices with opposite doping polarities. Numerical simulations with a commercial device simulator  confirm the validity of the concept and demonstrate its feasibility for scaling to 10nm channel lengths.
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Augusto, C.J.R.P., Forester, L. A New SiGeC Vertical MOSFET: Single-device CMOS (SD-CMOS). MRS Online Proceedings Library 1252, 210 (2010). https://doi.org/10.1557/PROC-1252-I02-10