A New SiGeC Vertical MOSFET: Single-device CMOS (SD-CMOS)

MRS Online Proceedings Library volume 1252, Article number: 210 (2010) Cite this article

Abstract

A new type of silicon-based Vertical MOSFET concept is presented, Single-Device CMOS (SD-CMOS), in which the same structure can be operated as NFET or as PFET, depending on the biasing conditions [1,2]. SD-CMOS offers new possibilities for simpler CMOS integration schemes; one of them requiring only 4 masks for the “Front-End”; with less cost to manufacture than any integration scheme requiring the fabrication of two devices with opposite doping polarities. Numerical simulations with a commercial device simulator [3] confirm the validity of the concept and demonstrate its feasibility for scaling to 10nm channel lengths.

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  1. Quantum Semiconductor LLC, CA, 4320 Stevens Creek Blvd., Suite 212, 95129, San Jose, USA

    Carlos J. R. P. Augusto & Lynn Forester

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  1. Carlos J. R. P. Augusto
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  2. Lynn Forester
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Augusto, C.J.R.P., Forester, L. A New SiGeC Vertical MOSFET: Single-device CMOS (SD-CMOS). MRS Online Proceedings Library 1252, 210 (2010). https://doi.org/10.1557/PROC-1252-I02-10

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