Crystalline Path Formation in Nanoglasses of PCM

MRS Online Proceedings Library volume 1251, Article number: 306 (2010) Cite this article

Abstract

This work presents an analytical model of crystalline phase formation in nanoglasses of phase change memory. We describe a data loss mechanism when the cell resistance changes significantly at elevated temperatures over long periods of time with no electrical bias applied. Unlike the standard approach, which relates crystalline shunt formation to aggregates of crystalline particles forming the percolation cluster, we look at the rare events of almost rectilinear path formation in very thin structures. They can occur at crystalline volume fractions considerably lower than the critical volume fraction required for percolation. We find the characteristic parameters which can describe statistics of these rare events.

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Affiliations

  1. Department of Physics and Astronomy, University of Toledo, OH, 43606, Toledo, USA

    M. Nardone, M. Simon & V. G. Karpov

  2. Intel Corporation, CA, SC9-09, 3601 Juliette Ln., 95054-1579, Santa Clara, USA

    I. V. Karpov

Authors
  1. M. Nardone
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  2. M. Simon
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  3. I. V. Karpov
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  4. V. G. Karpov
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Nardone, M., Simon, M., Karpov, I.V. et al. Crystalline Path Formation in Nanoglasses of PCM. MRS Online Proceedings Library 1251, 306 (2010). https://doi.org/10.1557/PROC-1251-H03-06

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