Wafer Bonding for Backside Illuminated CMOS Image Sensors Fabrication

MRS Online Proceedings Library volume 1249, Article number: 806 (2010) Cite this article

Abstract

Backside illuminated CMOS image sensors were developed in order to encompass the pixel area limitation due to metal interconnects. In this technology the fully processed CMOS wafer is bonded to a blank carrier wafer and then back-thinned in order to open the photosensitive sensor area. The process flows of the two main competing wafer bonding technologies used for this manufacturing process (adhesive bonding and low temperature plasma activated direct wafer bonding with polymer layers) will be reviewed.

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Affiliations

  1. EV Group, DI E. Thallner Str. 1, 4782, St. Florian/Inn, Austria

    Viorel Dragoi, Gerald Mittendorfer, Alexander Filbert & Markus Wimplinger

Authors
  1. Viorel Dragoi
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  2. Gerald Mittendorfer
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  3. Alexander Filbert
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  4. Markus Wimplinger
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Correspondence to Viorel Dragoi.

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Dragoi, V., Mittendorfer, G., Filbert, A. et al. Wafer Bonding for Backside Illuminated CMOS Image Sensors Fabrication. MRS Online Proceedings Library 1249, 806 (2010). https://doi.org/10.1557/PROC-1249-F08-06

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