Organometallic chemical liquid deposition (OMCLD) of Cu-SiO2 films for 3D filling in microelectronic applications

Abstract

The copper precursor N,N’-diisopropylacetamidinate has been decomposed at low temperature (80–110°C) in a liquid process under a moderate H2 pressure. Depending on the choice of the solvent, the process leads to a colloidal solution of well controlled copper nanoparticles or the deposition of composite Cu-SiO2 films on the surfaces. The latter layer is highly adhesive to silica surface, behaves as an active seed layer for electroless copper deposition and allows a conformal covering inside deep trenches.

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Correspondence to Pierre Fau.

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Piettre, K., Latour, V., Margeat, O. et al. Organometallic chemical liquid deposition (OMCLD) of Cu-SiO2 films for 3D filling in microelectronic applications. MRS Online Proceedings Library 1249, 302 (2010). https://doi.org/10.1557/PROC-1249-F03-02

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