Thermoelectric properties of doped and undoped mixed phase hydrogenated amorphous/nanocrystalline silicon thin films

Abstract

The Seebeck coefficient and dark conductivity for undoped, and n-type doped thin film hydrogenated amorphous silicon (a-Si:H), and mixed-phase films with silicon nanocrystalline inclusions (a/nc-Si:H) are reported. For both undoped a-Si:H and undoped a/nc-Si:H films, the dark conductivity is enhanced by the addition of silicon nanocrystals. The thermopower of the undoped a/nc-Si:H has a lower Seebeck coefficient, and similar temperature dependence, to that observed for undoped a-Si:H. In contrast, the addition of nanoparticles in doped a/nc-Si:H thin films leads to a negative Seebeck coefficient (consistent with n-type doping) with a positive temperature dependence, that is, the Seebeck coefficient becomes larger at higher temperatures. The temperature dependence of the thermopower of the doped a/nc-Si:H is similar to that observed in unhydrogenated a-Si grown by sputtering or following high-temperature annealing of a-Si:H, suggesting that charge transport may occur via hopping in these materials.

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Adjallah, Y., Blackwell, C. & Kakalios, J. Thermoelectric properties of doped and undoped mixed phase hydrogenated amorphous/nanocrystalline silicon thin films. MRS Online Proceedings Library 1245, 1710 (2009). https://doi.org/10.1557/PROC-1245-A17-10

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