Effect of ZnO Nanowire Doping on the Properties of Poly(3-hexylthiophene) Schottky Diodes

Abstract

Doping polymers with inorganic nanomaterials to form hybrid nanocomposites is an attractive approach to develop new lightweight optoelectronic materials with unique or improved properties. In this work, poly(3-hexylthiophene) (P3HT) Schottky diodes, doped with ZnO nanowires at different P3HT-to-ZnO concentrations, were studied. Device fabrication was carried out by drop casting the nanocomposite on a Pt electrode followed by thermal evaporation of an Al top electrode. ZnO nanowires were prepared via a physical vapor method with Zn as a source. The nanowires were dispersed in chlorobenzene, then the P3HT powder was added. Properties of the diodes were investigated using capacitance-voltage and current-voltage measurements. In addition, electrical resistance of the nanocomposite films was also investigated using a two-point probe measurement with Pt as Ohmic contacts. Results showed that ZnO nanowire doping decreases the built in potential of the diode and the electrical resistance of the nanocomposite film.

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Correspondence to S. Aga Rachel.

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Rachel, S.A., Roberto, A. & Mu, R. Effect of ZnO Nanowire Doping on the Properties of Poly(3-hexylthiophene) Schottky Diodes. MRS Online Proceedings Library 1212, 1108 (2009). https://doi.org/10.1557/PROC-1212-S11-08

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