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Growth of Single-Walled Carbon Nanotubes on Surface with Controlled Structures

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Abstract

Due to their excellent properties, single-walled carbon nanotubes (SWNTs) have been regarded as one of the most potential materials for future applications in nanoelectronic devices. However, there is a huge gulf between production and applications. To meet the needs for applications, SWNTs’ chirality, metallic/semiconducting property and morphology should be controlled in the growth process. Together with our recent works, we present herein a brief review on the growth of SWNTs on surface with controlled structures, including 1) Cap engineering for SWNTs growth with controlled chirality; 2) Reaction activity diversity induced growth of semiconducting SWNTs; and 3) Combination of two growth modes for fabricating SWNTs on surface with controlled morphology.

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Authors and Affiliations

  1. Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China

    Jin Zhang, Guo Hong, Liming Xie, Xuechun Yu & Zhongfan Liu

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  1. Jin Zhang
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  2. Guo Hong
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  3. Liming Xie
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  4. Xuechun Yu
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  5. Zhongfan Liu
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Zhang, J., Hong, G., Xie, L. et al. Growth of Single-Walled Carbon Nanotubes on Surface with Controlled Structures. MRS Online Proceedings Library 1204, 201 (2009). https://doi.org/10.1557/PROC-1204-K02-01

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  • DOI: https://doi.org/10.1557/PROC-1204-K02-01

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