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Simulations of CVD Diamond Film Growth Using a Simplified Monte Carlo Model

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Abstract

A simple 1-dimensional Monte Carlo (KMC) model has been developed to simulate the chemical vapour deposition (CVD) of a diamond (100) surface. The model considers adsorption, etching/desorption, lattice incorporation, and surface migration along and across the dimer rows. The reaction probabilities for these processes are re-evaluated in detail and their effects upon the predicted growth rates and morphology are described. We find that for standard CVD diamond conditions, etching of carbon species from the growing surface is negligible. Surface migration occurs rapidly, but is mostly limited to CH2 species oscillating rapidly back and forth between two adjacent radical sites. Despite the average number of migration hops being in the thousands, the average diffusion length for a surface species is <2 sites.

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Authors and Affiliations

  1. School of Chemistry, University of Bristol, Bristol, BS8 1TS, United Kingdom

    Paul William May, Jeremy N. Harvey, Neil L. Allan & James C. Richley

  2. Skobel’tsyn Institute of Nuclear Physics, Moscow State University, Vorob’evy gory, Moscow, 119991, Russia

    Yuri A. Mankelevich

Authors
  1. Paul William May
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  2. Jeremy N. Harvey
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  3. Neil L. Allan
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  4. James C. Richley
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  5. Yuri A. Mankelevich
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May, P.W., Harvey, J.N., Allan, N.L. et al. Simulations of CVD Diamond Film Growth Using a Simplified Monte Carlo Model. MRS Online Proceedings Library 1203, 1602 (2009). https://doi.org/10.1557/PROC-1203-J16-02

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  • DOI: https://doi.org/10.1557/PROC-1203-J16-02

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